A Novel Carbon Nanotube FED Structure and UV-Ozone Treatment

  • Chun, Hyun-Tae (School of Advanced Materials & Systems Engineering, Kumoh National Institute of Technology) ;
  • Lee, Dong-Gu (School of Advanced Materials & Systems Engineering, Kumoh National Institute of Technology)
  • Published : 2006.03.24

Abstract

A 10" carbon nanotube field emission display device was fabricated with a novel structure with a hopping electron spacer (HES) by screen printing technique. HES plays a role of preventing the broadening of electron beams emitted from carbon nanotubes without electrical discharge during operation. The structure of the novel tetrode is composed of carbon nanotube emitters on a cathode electrode, a gate electrode, an extracting electrode coated on the top side of a HES, and an anode. HES contains funnel-shaped holes of which the inner surfaces are coated with MgO. Electrons extracted through the gate are collected inside the funnel-shaped holes. They hop along the hole surface to the top extracting electrode. In this study the effects of the addition of HES on emission characteristics of field emission display were investigated. An active ozone treatment for the complete removal of residues of organic binders in the emitter devices was applied to the field emission display panel as a post-treatment.

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References

  1. B. F. coll, K. A. Dean, J. Jaskie, S. Johnson, and C. Hagen, in Proc. EURODISPLAY (2002), p. 219
  2. J. J. brown and G. Yu, in SID Tech. Dig. (2003) p. 855
  3. S. J. Kwon, H . J. Chung, S. H. Lee, H. W. Choi, Y. H. Shin, D. H. Lee, and J. D. Lee, J. Information Display, 5, 18 (2004)
  4. S. Okuda, in Proc. Nano-Electro. Vac. Symp. (2004), p. 1
  5. P. G. Collins and R. Avouris, Scientific American, 283(6), 38 (2000)
  6. J. J. Scholtz, D. Dijkkamp, and R. W. A. Schmitz, Philips J. Res. 50, 375 (1996) https://doi.org/10.1016/S0165-5817(97)84681-5
  7. D. G. Lee, m. Yi, H. Jung, W.S. Seo, J. W. Park, H. T. Chun, and N. J. Koh, Materials Science Forum, 426-432, 2297 (2003)
  8. R. Balkenede, A. A. m. B. Bogaertx, J. J. Scholotz, R. R. M. Tijburg, and H. X. Willems. Philips J. Res. 50, 365 (1996) https://doi.org/10.1016/S0165-5817(97)84680-3
  9. J. R. Vig, J. Vac. Sci. Technol. A3, 1027 (1985)