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Compositional Change of MgO Barrier and Interface in CoFeB/MgO/CoFeB Tunnel Junction after Annealing

  • Bae, J.Y. (Department of Materials Science and Engineering, KAIS) ;
  • Lim, W.C. (Department of Materials Science and Engineering, KAIS) ;
  • Kim, H.J. (Department of Materials Science and Engineering, KAIS) ;
  • Kim, D.J. (Department of Materials Science and Engineering, KAIS) ;
  • Kim, K.W. (Device Lab., SAIT) ;
  • Kim, T.W. (Device Lab., SAIT) ;
  • Lee, T.D. (Department of Materials Science and Engineering, KAIS)
  • 발행 : 2006.03.01

초록

Recent experiments have demonstrated high TMR ratios in MTJs with the MgO barrier [1,2]. The CoFeB/MgO/CoFeB junctions showed better properties than the CoFe/MgO/CoFe junctions because the MgO layer had a good crystalline structure with (001) texture and smooth and sharp interface between CoFeB/MgO [3]. The amorphous CoFeB with 20 at%B starts the crystallization at $340^{\circ}C$ [4] and this crystallization of the CoFeB helps obtaining the high TMR ratio. In this work, the compositional changes in the MgO barrier and at the interface of CoFeB/MgO/CoFeB after the CoFeB crystallization were studied in annealed MTJs. XPS depth profiles were utilized. TEM analyses showed that the MgO barrier had (100) texture on CoFeB in the junctions. B in the bottom CoFeB layer diffused into the MgO barrier and B-oxide was formed at the interface of CoFeB/MgO/CoFeB after the CoFeB crystallization.

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참고문헌

  1. Stuart S. P. Parkin, Christian Kaiser, Alex Panchula, Philp M. Rice, Brian Hughes, Mahesh Samant, and See Hun Yang, Nature Materials 3, 862 (2004) https://doi.org/10.1038/nmat1256
  2. Shinji Yuasa, Taro Nagahama, Akio Fukushima, Yoshishige Suzuki, and Koji Ando, Nature Materials 3, 868 (2004) https://doi.org/10.1038/nmat1257
  3. Jun Hayakawa, Shoji Ikeda, Fumihiro Matsukura, Hiromasa Takahashi, and Hideo Ohno, J. J. Appl. Phys. 44, L587 (2005) https://doi.org/10.1143/JJAP.44.L587
  4. Ji Young Bae, Woo Chang Lim, Hyun Jeong Kim, Tae Wan Kim, and Taek Dong Lee, J. J. Appl. Phys. 44, 3002 (2005) https://doi.org/10.1143/JJAP.44.3002
  5. H. L. Meyerheim, R. Popescu, and J. Kirschner, Phys. Rev. Lett. 87, 076102 (2001) https://doi.org/10.1103/PhysRevLett.87.076102
  6. X-G. Zhang, W. H. Butler, and Amrit Bandyopadhyay, Phys. Rev. B 68, 092402 https://doi.org/10.1103/PhysRevB.68.092402

피인용 문헌

  1. Tailoring the Hysteresis Loop of the Si/Cu(10nm)/FeMn(10-30nm)/CoFeB(10nm) Bilayer System vol.622-623, pp.1662-8985, 2012, https://doi.org/10.4028/www.scientific.net/AMR.622-623.695
  2. Effect of Nb concentration on the microstructure of Al and the magnetoresistive properties of the magnetic tunnel junction with a Nb-doped Al-oxide barrier vol.204, pp.12, 2007, https://doi.org/10.1002/pssa.200777408