Transactions on Electrical and Electronic Materials

  • 제7권1호
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  • Pages.21-25
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  • 2006
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  • 1229-7607(pISSN)
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  • 2092-7592(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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LC Aligning Properties for Homeotropic Alignment of NLC on the SiOx Thin Film as Incident Angle of Electron Beam Evaporation Angle

  • Kim, Jong-Hwan (Department of Electrical and Electronic Engineering, Yonsei University) ;
  • Kang, Hyung-Ku (Department of Electrical and Electronic Engineering, Yonsei University) ;
  • Han, Jin-Woo (Department of Electrical and Electronic Engineering, Yonsei University) ;
  • Kang, Soo-Hee (Department of Electrical and Electronic Engineering, Yonsei University) ;
  • Kim, Young-Hwan (Department of Electrical and Electronic Engineering, Yonsei University) ;
  • Hwang, Jeoung-Yeon (Department of Electrical and Electronic Engineering, Yonsei University) ;
  • Seo, Dae-Shik (Department of Electrical and Electronic Engineering, Yonsei University)
  • 발행 : 2006.02.01
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초록

In this study, liquid crystal (LC) aligning properties for homeotropic alignment on the $SiO_x$ thin film by electron beam evaporation method with electron beam system in accordance with the evaporation angles were investigated. Also, the control of pretilt angles homeotropic aligned LC on $SiO_x$ thin film as the function of the evaporation angles were studied. The uniform vertical LC alignment on the $SiO_x$ thin film surfaces with electron beam evaporation was achieved with all of the thin film angle conditions. It is considerated that the LC alignment on the $SiO_x$ thin film by electron beam evaporation is attributed to elastic interaction between LC molecules and micro-grooves at the $SiO_x$ thin film surface created by evaporation. The values of the pretilt angles according to the evaporation angle were from about $0.7^{\circ}$ to about $3.4^{\circ}$. The highest pretilt angles of about $3.4^{\circ}$ in aligned NLC on the $SiO_x$ thin film surfaces by electron beam evaporation were measured under the condition of $45^{\circ}$. Also, good LC alignment states on the treated $SiO_x$ thin film layer by electron beam evaporation were observed at annealing temperature of $250^{\circ}C$. Consequently, the high pretilt angle and the good thermal stability of LC alignment on the $SiO_x$ thin film by electron beam evaporation can be achieved.

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참고문헌

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