Structural and Dielectirc Properties of $Ba_{0.5}Sr_{0.5}TiO_3$ Thick Films Doped with MgO

MgO가 첨가된 $Ba_{0.5}Sr_{0.5}TiO_3$ 후막의 구조 및 유전 특성

  • 강원석 (광운대학 전자재료공학과) ;
  • 남성필 (광운대학 전자재료공학과) ;
  • 고중혁 (광운대학 전자재료공학과) ;
  • 이성갑 (경상대학 세라믹공학과) ;
  • 이영희 (광운대학 전자재료공학과)
  • Published : 2006.12.01

Abstract

Using the $Ba_{0.5}Sr_{0.5}TiO_3$(BST) powders prepared by the Sol-Gel method, the BST thick films were fabricated on the $Al_2O_3 $substrates coated with Pt by the screen printing method. Compared with pure BST thick films, the structural and dielectric properties of the BST thick films doped with $1{\sim}10$ wt % MgO were investigated. It was observed that the Mg substitution into BST causes a shift in the cubic-tetragonal BST phase transition peak to a lower temperature. The microstructure of the BST substituted with Mg was homogeneous and dense. Mg substitution into BST had a significant effect on the grain size reduction. Dielectric constant was decreased with increasing the MgO content and temperature. In the case of BST thick films doped with 1 wt% MgO, the relative permittivity and dielectric loss were 1581 and 1.4 % at 1 MHz.

Keywords

References

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