Characteristics of $(Pb_{1-x}La_x)(Zr_{0.5}Ti_{0.5})O_3$ thin films as a function of La content

$(Pb_{1-x}La_x)(Zr_{0.5}Ti_{0.5})O_3$ 박막의 La 치환량에 따른 특성

  • 정낙원 (한국해양대학교 전기전자공학부) ;
  • 이성환 (위덕대학교 에너지전기공학부) ;
  • 이동영 (위덕대학교 에너지전기공학부) ;
  • 김동훈 (경북대학교 전자전기컴퓨터학부)
  • Published : 2006.11.30

Abstract

The electrical characteristics associated with crystal structure changes as a function of La content for $(Pb_{1-x}La_x)(Zr_{0.5}Ti_{0.5})O_3$ thin films were investigated for applications in memory capacitors. Tetragonality of PLZT films decreased with increasing La content. Thin films with La $\geq$ 20 mol% were found to be cubic. Films with La $\geq$ 12 mol% exhibited broader dielectric peaks compared to those of bulk ceramics and behaved as relaxer ferroelectrics. Tetragonal PLZT film with 12 mol% La had a dielectric constant maximum of 1330 at room temperature and a charge storage density of ${\sim}18{\mu}C/cm^2$ at 5 V. Decrease in coercive field and remnant polarization with increase in La content were resulting from less dipolar response caused by the decreased crystal anisotropy. The leakage current densities $<10^{-8}A/cm^2$ up to 5 V bias voltage were observed for the films with La $\geq$ 14 mol%.

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References

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