Journal of Sensor Science and Technology (센서학회지)

The Korean Sensors Society (한국센서학회)
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SOI CMOS image sensor with pinned photodiode on handle wafer

SOI 핸들 웨이퍼에 고정된 광다이오드를 가진 SOI CMOS 이미지 센서

  • Cho, Yong-Soo (Department of Electronics, Kyungpook National University) ;
  • Choi, Sie-Young (Department of Electronics, Kyungpook National University)
  • Published : 2006.09.30
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Abstract

We have fabricated SOI CMOS active pixel image sensor with the pinned photodiode on handle wafer in order to reduce dark currents and improve spectral response. The structure of the active pixel image sensor is 4 transistors APS which consists of a reset and source follower transistor on seed wafer, and is comprised of the photodiode, transfer gate, and floating diffusion on handle wafer. The source of dark current caused by the interface traps located on the surface of a photodiode is able to be eliminated, as we apply the pinned photodiode. The source of dark currents between shallow trench isolation and the depletion region of a photodiode can be also eliminated by the planner process of the hybrid bulk/SOI structure. The photodiode could be optimized for better spectral response because the process of a photodiode on handle wafer is independent of that of transistors on seed wafer. The dark current was about 6 pA at 3.3 V of floating diffusion voltage in the case of transfer gate TX = 0 V and TX=3.3 V, respectively. The spectral response of the pinned photodiode was observed flat in the wavelength range from green to red.

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