Journal of Sensor Science and Technology (센서학회지)

The Korean Sensors Society (한국센서학회)
권호 표지
DOI QR코드

DOI QR Code

Growth and study on photocurrent of valence band splitting for AgGaSe2 single crystal thin film by hot wall epitaxy

Hot Wall Epitaxy(HWE)법에 의한 AgGaSe2 단결정 박막 성장과 가전자대 갈라짐에 대한 광전류 연구

  • Published : 2006.11.30
Download PDF
⟨ Previous Next ⟩

Abstract

Single crystal $AgGaSe_{2}$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $420^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $AgGaSe_{2}$ source at $630^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $AgGaSe_{2}$ thin films measured with Hall effect by van der Pauw method are $4.05{\times}10^{16}/cm^{3}$, $139cm^{2}/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $AgGaSe_{2}$ obtained from the absorption spectra was well described by the Varshni's relation, $E_{g}(T)$=1.9501 eV-($8.79{\times}10^{-4}{\;}eV/K)T^{2}$/(T+250 K). The crystal field and the spin-orbit splitting energies for the valence band of the $AgGaSe_{2}$ have been estimated to be 0.3132 eV and 0.3725 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}So$ definitely exists in the ${\Gamma}_{5}$ states of the valence band of the $AgGaSe_{2}$. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1}-$, $B_{1}-$, and $C_{1}-$exciton peaks for n=1.

Keywords

References

  1. S. Wagner, J. L. Shay, P. Migliorato, and H. M. Kasper, 'Study of the band edge in $AgGaSe_2$ by photovoltaic effect', Appl. Phys. Lett., vol. 25, pp. 434-438, 1974 https://doi.org/10.1063/1.1655537
  2. I. Shih, A. Vahid Shahidi, and C. H. Champness, 'Transport properties of $AgGaSe_2$ single crystal', J. Appl. Phys., vol. 56, pp. 421-425, 1984 https://doi.org/10.1063/1.333981
  3. P. Migliorato, J. L. Shay, and H. M. Kasper, 'Heterojunction formation in PbS/$AgGaSe_2$ temary solar cells', J. Elec. Mate., vol. 4, pp. 209-213, 1975 https://doi.org/10.1007/BF02655402
  4. L. L. Kazmerski, P. J. Ireland, F. R. White, and R. B. Cooper, 13th. IEEE Photovoltaic Specialistic Conf. Record (IEEE, Princeton 1978), pp. 184-188
  5. I. W. F. Russel, B. N. Baron, and R. E. Rocheleau, 'Photoluminescience and phconductivity measurements on $AgGaSe_2$', J. Vac. Sci. Technol., vol. B2, no. 4, pp. 840-845, 1984
  6. D. C. Hanna, V. V. Rampel, and R. C. Smith, 'Saturation photoconductivity in $AgGaSe_2$', Opt. Commun., vol. 8, pp. 151-155, 1973 https://doi.org/10.1016/0030-4018(73)90160-0
  7. 홍광준, 홍명석, '수직 Bridgman범에 의한 CdTe 단결정 성장과 특성', 센서학회지, 제14권, 제4호, pp. 369-373, 2005 https://doi.org/10.5369/JSST.2005.14.6.369
  8. W. Jantz and P. Koidi, 'Optical absorption of Codoped $AgGaSe_2$', Appl. Phys. Lett., vol. 31, pp. 99- 104, 1977 https://doi.org/10.1063/1.89579
  9. B. Tell and H. M. Kasper, 'The optical properties of $AgGaSe_2$ crystal grown by the sublimation method', Phys. Rev., vol. B6, pp. 3008-3011, 1972
  10. K. J. Hong, S. H. You, T. S. Jeong, and C. J. Youn, 'Point defect study from low photoluminescience of the $CdIn_2S_4$ films grown by hot wall epitaxy method', J. Crystal. Growth, vol. 271, pp. 391-395, 2004 https://doi.org/10.1016/j.jcrysgro.2004.07.024
  11. 홍광준, 윤석진, 'Optoelectrical properties of HgCdTe epilayers grown by hot wall epitaxy', 센서학회지, 제13권, 제4호, pp. 122-126, 2004
  12. B. D. Cullity, 'Elements of X-ray diffractions', (Addson-Welsey, 1985) Chap. 11
  13. P. W, Ban and R. Viehman, 'The optical properties of $AgGaSe_2$ thin films', J. Appl. Phys., vol. 45, pp. 825-829, 1974
  14. E. A. Wood, Crystal Orientation Manual, Columbia University Press (1963)
  15. H. Fujita, 'Electron radition damage in cadiumselenide crystal at liquid-helium temperrature', J. Phys. Soc., Jpn., vol. 20, pp. 109-114, 1965 https://doi.org/10.1143/JPSJ.20.109
  16. V. P. Varshni, 'Far-infrared optical absorption of $Fe^{2+}$ in ZnSe', Physica, vol. 34, pp. 149-155, 1967 https://doi.org/10.1016/0031-8914(67)90062-6
  17. J. L. Shay and J. H. Wernick, 'Ternary chalcopyrite semiconductor : Electronic properties, and applications', (pergamon, 1975), Chap. 4
  18. B. Segall and D. T. F. Marple, In : M. Aven and J. S. Prenerin (Eds), Physics and Chemistry of II-VI Compounds, North-Holland, (Amsterdam, 1967), pp. 340-349
  19. S. Shirakata, H. Miyake, and K. Sugiyama, 'Growth by directional freezing of $AgGaSe_2$ and diffused homojunctions in bulk material', J. Applied Phys., vol. 87, pp. 7294-7299, 2000 https://doi.org/10.1063/1.372983