A Study on the Diplexer Switch of High Isolation Using Varactor Diode

바랙터 다이오드를 이용한 높은 격리도를 갖는 DIPLEXER 스위치에 관한 연구

  • 강명수 (국민대 공대 전자정보통신공학과) ;
  • 박준석 (국민대 공대 전자정보통신공학과)
  • Published : 2005.04.01

Abstract

In this paper, using diplexer structure and varactor diode controlled by reverse bias voltage for diplexer switch gives possibilities to improve isolation and current characteristics. 1 have newly designed switch with high isolation by application varactor diode corresponding to capacitor of diplexer. The low-pass filter for proposed tunable diplexer passes the microwave signal in the bandwidth for wireless cellular network systems and high-pass filter passes it in the bandwidth for wireless personal communication services (PCS) network systems. As the capacitance of the low-pass filter increases, the cut-off frequency can be moved to low frequency, so that the switch is on state in cellular bandwidth and off state in the PCS bandwidth, in contrast to, as the capacitance for attenuation characteristic of high-pass filter increases, it can be moved to high frequency, so that the switch is off state and on state in the cellular bandwidth. it is possible to improve isolation and current consumption characteristics by application diplexer design methods and varactor diode. 1 expect that the tunable diplexer circuit and design methods should be able to find applications on MMIC and low temperature copired ceramic (LTCC).

Keywords

References

  1. T. Shigematsu, N Sumatsu, N. Takeuchi, Y Iyama, and A, Mizoduchi, 'A 6-18 GHz 20W SPDT switching using shunt discrete PIN diodes', IEEE MTT-S Dig, pp. 526-530, 1997 https://doi.org/10.1109/MWSYM.1997.602847
  2. S. Pacheco, C.T. Nguyen, and L.P.B. Kathehi, Micromechanical Electrostatic K -Band Switches, IEEE MTT-S Digest, pp. 1569-1572, 1998
  3. M.J, Shindler andA. Morris, DC-40GHz and 240GHz MMIC SPDT Switches, IEEE MTT, pp, 1486-1493, 1987
  4. Hiroshi Mizutani, Masahiro Funabashi, Compact DC-60 GHz HIFET MMlC Switches Using Ohmic Electrode-Sharing Technology, IEEE MTT, pp. 1597-1603, November1998
  5. Y. Ayasli, R Mozzi, L. Hanes, and L.D. Reynolds, An X-Band l0W Transmit-Receive GaAs FET Switch, Microwave Switching with GaAs FETs, IEEE MTT-S Digest, pp. 42-46, 1982 https://doi.org/10.1109/MCS.1982.1112178
  6. Yunus, N.A.M; Wagiran, R; Postoyalko, V.;, ' Design of a microstrip SPDT PIN diode switch' semiconductor Electronics, 2002. Proceedings. lCSE 2002. IEEE international Conference on, 19-21 Dec. 2002
  7. Tanaka. S, Kimura. T, 'A PIN diode switch operation at multi-frequency bands' Microwave symposium Digest, 2004 IEEE MTT-S International, Volume: 2, June 6-11, 2004 Pages : 1127-1130 https://doi.org/10.1109/MWSYM.2004.1339184
  8. , B. Muldavin and G. M. Rebeiz, 'All-metal series and series/shunt MEMS switches,' IEEE Microwave Wireless Comp, Lett, vol. 11, pp373-375, Sept. 2001 https://doi.org/10.1109/7260.950765
  9. J, B Muldavin and G. M Rebeiz, 'Inline capacitive and DC-contact MEMS shunt switches,' IEEE Microwave Wireless Comp. Lett vol. 11, pp.334-336, Aug. 2001 https://doi.org/10.1109/7260.941781
  10. S. Pacheco, D. Peroulis, and' L. P. B. Katehi, 'MEMS single-pole- double-throw(SPDT) X and K-band witching circuits,' in IEEE int Microwave Symp. Dig., Phoenix, AZ, 2001, pp. 321-324 https://doi.org/10.1109/MWSYM.2001.966897
  11. J. Y. Park, G. H. Kim, and J. U. Bu, 'Monolithically integrated RF MEMS capacitive switches,' Proceedings of the 32nd International Symposium on Robotics, pp, 19-21, 2001
  12. C. Goldsmith, J. Randall, S. Eshelman, and T. H. Lin, 'Characteristics of micromachined switches at microwave frequencies,' IEEE Microwave Theory and Technique Simp. Digest, pp.1141-1144 https://doi.org/10.1109/MWSYM.1996.511231
  13. G. L. Matthaei, L. Young, E. M. T. Jones, ' Microwave filters, impedance-matching networks, and coupling structures' pp. 83-161