References
- S.J. Pearton, F. Ren, A.P. Zhang, and K.P. Lee, Fabrication and performance of GaN electronic devices, Materials Science and Engineering, R30, pp.55-212, 2000 https://doi.org/10.1016/S0927-796X(00)00028-0
- M. A. Khan, M. S. Shur, Q. C. Chen, and J. N. Kuznia, Current/voltage characteristic collapse in AlGaN/GaN heterostructure insulated gate field effect transistors at high drain bias, Electron. Lett., vol. 30, p.2175-2176, Dec. 8, 1994 https://doi.org/10.1049/el:19941461
- M. Asif Khan, X. Hu, A. Tarakji, G. Sumin, J. Yang, R. Gaska, M. S. Shur, , AlGaN/GaN Metal Oxide Semiconductor Heterostructure Field Effect Transistors on SiC substrates, Applied Physics Lett. vol. 77 No. 9, pp.1339-1341, 2000 https://doi.org/10.1063/1.1290269
- M. Asif Khan, X. Hu, G. Sumin, A. Lunev, J.Yang, M. S. Shur, , AlGaN/GaN Metal Oxide Semiconductor Heterostructure Field Effect Transistor, IEEE Electron Device Lett. vol. 21 No. 2, pp.63-65, 2000 https://doi.org/10.1109/55.821668
- S. Ootomo, T. Hashizume, H. Hasegawa, A Novel Thin Al2O3 Gate Dielectric by ECR-Plasma Oxidation of Al for AlGaN/GaN Insulated Gate Heterostructure Field-Effect Transistors, Phys. stat. Sol. (c), 0, 90, 2002 https://doi.org/10.1002/pssc.200390124
- J. Y. Lee, B. C. Lai, The electrical properties of high dielectric constant and ferroelectric thin films for very large scale integration circuits, Handbook of Thin Films Materials:Ferroelectric and dielectric thin films, Academic press, pp. 1- 98, 2002
- S. W. Choi, C. M. Jang, D. Y. Kim, J. S. Ha, H. S. Park, W. K. Y. Koh, C. S. Lee, Journal of the Korean Physical Society, Vol. 42, pp. S975-S979, February 2003
- D.H. Yoon, V. Kumar, J. H. Lee, R. Schwindt, W. J. Chang, J. Y. Hong, C. M. Jeon, S. B. Bae, M. R. Park, K. S. Lee, J. L Lee, I. Adesida, IEE Electronics Lett., vol. 39, pp. 566, 2003 https://doi.org/10.1049/el:20030337
- O. Katz, A. Horn, G. Bahir, J. Salzman, IEEE Trans. Electron Devices. vol. 50, No. 10, pp.2002, 2003 https://doi.org/10.1109/TED.2003.816103
- W. Liu: Fundamentals of III-V devices-HBTs, MESFETs, and HFETs/HEMTs (A Wiley-Interscience publication) Chap. 5, pp.337, 1999
- P. A. Ivanov, M. E. Levinshtein, G. Simin, X. Hu, J. Yang, M. A. Khan, S. L. Rumyantsev, M. S. Shur, R. Gaska, vol. 37, No. 24, pp.1479, 2001 https://doi.org/10.1049/el:20010982