KIEE International Transactions on Electrophysics and Applications

The Korean Institute of Electrical Engineers (대한전기학회)
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Improved Performance of 1.55 ㎛ InGaAsP/InP Superluminescent Diodes by Tapered Stripe Structure

  • Choi Young-Kyu (Division of Photonics, Faculty of Engineering Silla University)
  • Published : 2005.02.01
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Abstract

We proposed a structure for a 1.55 ㎛ strained separate confinement heterostructure (SCH) multi- quantum well (MQW) superluminescent diode (SLD), having a tapered active region. SLD was fabricated through a two-step procedure: the first step being metal organic chemical vapor deposition (MOCVD) and the second-step being liquid phase epitaxy (LPE). We used a 15 laterally tilted stripe and window region to suppress the lasing action of the SLD. The performance of the SLD showed output power of 11 mW with no lasing under 200 mA pulse driving. The full-width at half-maximum was 42 nm at 200 mA, 25℃.

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References

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