ETRI Journal

Electronics and Telecommunications Research Institute (한국전자통신연구원)
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Laser Process Proximity Correction for Improvement of Critical Dimension Linearity on a Photomask

  • Park, Jong-Rak (Department of Photonic Engineering, chosun University) ;
  • Kim, Hyun-Su (Department of Photonic Engineering, chosun University) ;
  • Kim, Jin-Tae (Department of Photonic Engineering, chosun University) ;
  • Sung, Moon-Gyu (Photomask Team, Samsung Electronics Co., Ltd.) ;
  • Cho, Won-Il (Photomask Team, Samsung Electronics Co., Ltd.) ;
  • Choi, Ji-Hyun (Photomask Team, Samsung Electronics Co., Ltd.) ;
  • Choi, Sung-Woon (Photomask Team, Samsung Electronics Co., Ltd.)
  • Received : 2004.06.15
  • Published : 2005.04.30
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Abstract

We report on the improvement of critical dimension (CD) linearity on a photomask by applying the concept of process proximity correction to a laser lithographic process used for the fabrication of photomasks. Rule-based laser process proximity correction (LPC) was performed using an automated optical proximity correction tool and we obtained dramatic improvement of CD linearity on a photomask. A study on model-based LPC was executed using a two-Gaussian kernel function and we extracted model parameters for the laser lithographic process by fitting the model-predicted CD linearity data with measured ones. Model-predicted bias values of isolated space (I/S), arrayed contact (A/C) and isolated contact (I/C) were in good agreement with those obtained by the nonlinear curve-fitting method used for the rule-based LPC.

Keywords

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