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Electrical Resistivity and Charge Density of Bismuth Telluride Doped with Erbium

  • Yeom, Tae-Ho (Division of Applied Science, Cheongju University)
  • 발행 : 2005.12.01

초록

The electric properties of a single crystal bismuth telluride doped with a small concentration of Erbium, $Bi_{z-x}Er_xTe_3$ with x = 0.002, are investigated as a function of temperature. The resistivity was obtained by using the van der Pauw method. The measured electrical resistivity is 78 ${\mu}{\Omega}cm$ at 4.2 K. The charge density of $Bi_{z-x}Er_xTe_3$ is found to be $2{\times}10^{19}/cm^3$ at 4.2 K. It turns out that $Bi_{z-x}Er_xTe_3$ is a p-type semiconductor. It is discussed that the high mobility and less density support that $Bi_{z-x}Er_xTe_3$ is a potential sensor with high energy resolution. Comparison with an established material (i.e. Au:Er alloy) is also discussed.

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참고문헌

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피인용 문헌

  1. Structure and magnetic properties of Cu-doped Bi2Te3 and Sb2Te3 single crystals vol.61, pp.10, 2012, https://doi.org/10.3938/jkps.61.1675