반도체디스플레이기술학회지 (Journal of the Semiconductor & Display Technology)
- 제4권2호
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- Pages.39-43
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- 2005
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- 1738-2270(pISSN)
Plasma Assisted ALD 장비 계발과 PAALD법으로 증착 된 TaN 박막의 전기적 특성
Development of Plasma Assisted ALD equipment and Electrical Characteristic of TaN thin film deposited PAALD method
- 도관우 (경북대학교 전자공학과) ;
-
김경민
(경북대학교 전자공학과) ;
- 양충모 (경북대학교 전자공학과) ;
- 박성근 (경북대학교 전자공학과) ;
- 나경일 (경북대학교 전자공학과) ;
-
이정희
(경북대학교 전자공학과) ;
-
이종현
(경북대학교 전자공학과)
- Do Kwan Woo (School of electrical engineering, Kyungpook National University) ;
-
Kim Kyoung Min
(School of electrical engineering, Kyungpook National University) ;
- Yang Chung Mo (School of electrical engineering, Kyungpook National University) ;
- Park Seong Guen (School of electrical engineering, Kyungpook National University) ;
- Na Kyoung Il (School of electrical engineering, Kyungpook National University) ;
-
Lee Jung Hee
(School of electrical engineering, Kyungpook National University) ;
-
Lee Jong Hyun
(School of electrical engineering, Kyungpook National University)
- 발행 : 2005.06.01
초록
In the study, in order to deposit TaN thin film for diffusion barrier and bottom electrode we made the Plasma Assisted ALD equipment and confirmed the electrical characteristics of TaN thin films grown PAALD method. Plasma Assisted ALD equipment depositing TaN thin film using PEMAT(pentakis(ethylmethlyamino) tantalum) precursor and NH3 reaction gas is shown that TaN thin film deposited high density and amorphous phase with XRD measurement. The degree of diffusion and reaction taking place in Cu/TaN (deposited using 150W PAALD)/