Journal of the Microelectronics and Packaging Society (마이크로전자및패키징학회지)
- Volume 12 Issue 3 Serial No. 36
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- Pages.213-217
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- 2005
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- 1226-9360(pISSN)
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- 2287-7525(eISSN)
The Properties of Polymer Light Emitting Diodes with ITO/PEDOT:PSS/MEH-PPV/Al Structure
ITO/PEDOT:PSS/MEH-PPV/Al 구조의 고분자 유기발광다이오드의 특성 연구
- Gong, Su-Cheol (Department of Electronics Engineering, Dankook University) ;
- Chang, Ho-Jung (Department of Electronics Engineering, Dankook University)
- Published : 2005.09.01
Abstract
The polymer light emitting diodes (PLED) with ITO/PEDOT:PSS/MEH-PPV/Al structure were prepared on ITO(indium tin oxide)/Glass substrates using PEDOT:PSS[poly(3,4-ethylenedioxythiophene):poly(styrene sulfolnate)] as the hole transport material and MEH-PPV[poly(2-methoxy-5-(2-ethyhexoxy)-1,4phenylenvinylene)] as emission material layer. The dependences on the surface roughnees and friction coefficient between film layers were investigated as a function of the MEH-PPV concentrations
ITO(indium tin oxide)/Glass 기판위에 정공 수송층으로 PEDOT:PSS[poly(3,4-ethylenedioxythiophene):poly(styrene sulfolnate)]과 발광층으로 MEH-PPV[poly(2-methoxy-5-(2-ethyhexoxy)-1,4phenylenvinylene)]의 고분자를 사용하여 ITO/PEDOT:PSS/MEH-PPV/Al 구조를 갖는 고분자 유기 발광다이오드 (polymer light emitting diode: PLED)를 제작하였다. 고분자 유기 발광다이오드 제작시 MEH-PPV의 농도