Journal of the Microelectronics and Packaging Society (마이크로전자및패키징학회지)
- Volume 12 Issue 3 Serial No. 36
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- Pages.197-205
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- 2005
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- 1226-9360(pISSN)
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- 2287-7525(eISSN)
Application of Au-Sn Eutectic Bonding in Hermetic Rf MEMS Wafer Level Packaging
Au-Sn 공정 접합을 이용한 RF MEMS 소자의 Hermetic 웨이퍼 레벨 패키징
- Wang Qian (PKG center, Samsung Advanced Institute of Technology) ;
- Kim Woonbae (PKG center, Samsung Advanced Institute of Technology) ;
- Choa Sung-Hoon (MEMS Lab, Samsung Advanced Institute of Technology) ;
- Jung Kyudong (PKG center, Samsung Advanced Institute of Technology) ;
- Hwang Junsik (PKG center, Samsung Advanced Institute of Technology) ;
- Lee Moonchul (PKG center, Samsung Advanced Institute of Technology) ;
- Moon Changyoul (PKG center, Samsung Advanced Institute of Technology) ;
- Song Insang (MEMS Lab, Samsung Advanced Institute of Technology)
- ;
- 김운배 (삼성종합기술원 패키지 센터) ;
- 좌성훈 (삼성종합기술원 MEMS 랩) ;
- 정규동 (삼성종합기술원 패키지 센터) ;
- 황준식 (삼성종합기술원 패키지 센터) ;
- 이문철 (삼성종합기술원 패키지 센터) ;
- 문창렬 (삼성종합기술원 패키지 센터) ;
- 송인상 (삼성종합기술원 MEMS 랩)
- Published : 2005.09.01
Abstract
Development of the packaging is one of the critical issues for commercialization of the RF-MEMS devices. RF MEMS package should be designed to have small size, hermetic protection, good RF performance and high reliability. In addition, packaging should be conducted at sufficiently low temperature. In this paper, a low temperature hermetic wafer level packaging scheme for the RF-MEMS devices is presented. For hermetic sealing, Au-Sn eutectic bonding technology at the temperature below
RF MEMS 기술에서 패키지의 개발은 매우 중요하다. RF MEMS 패키지는 소형화, hermetic 특성, 높은 RF 성능 및 신뢰성을 갖도록 설계되어야 한다. 또한 가능한 저온의 패키징 공정이 가능해야 한다. 본 연구에서는 저온 공정을 이용한 RF MEMS 소자의 hermetic 웨이퍼 레벨 패키징을 제안하였다. Hermetic sealing을 위하여 약