Transactions on Electrical and Electronic Materials

  • 제6권5호
  • /
  • Pages.214-220
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  • 2005
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  • 1229-7607(pISSN)
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  • 2092-7592(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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Degradation of Ferroelectric Properties of Pt/PZT/Pt Capacitors in Hydrogen-containing Environment

  • Kim, Dong-Chun (Department of Materials Science and Engineering, KAIST) ;
  • Lee, Won-Jong (Department of Materials Science and Engineering, KAIST)
  • 발행 : 2005.10.01
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초록

The ferroelectric properties of the $Pt/PZT(Pb(Zr,Ti)O_3)/Pt$ capacitors are severely degraded when they are annealed in hydrogen-containing environment. Hydrogen atoms created by the catalytic reaction of Pt top electrode during annealing in hydrogen ambient penetrate into PZT films and generate oxygen vacancies by the reduction of the PZT films, which is likely to cause the degradation. The degree of hydrogen-induced degradation and the direction of voltage shift in P-E curves of the pre-poled PZT capacitors after annealing in hydrogen ambient is dependent on the polarity of the pre-poling voltage. This implies that oxygen vacancies causing hydrogen induced degradation are generated by hydrogen ions having a polarity. The degraded ferroelectricity of the PZT capacitors can be effectively recovered by the shift of oxygen vacancies toward the Pt top electrode interface during post-annealing in oxygen environment with applying negative unipolar stressing.

키워드

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피인용 문헌

  1. Chemical mechanical polishing characteristics in (Bi,La)Ti3O12 damascene process for high-density ferroelectric memories vol.515, pp.16, 2007, https://doi.org/10.1016/j.tsf.2006.11.176