대한전자공학회논문지SD (Journal of the Institute of Electronics Engineers of Korea SD)

대한전자공학회 (The Institute of Electronics and Information Engineers)
권호 표지

추출격자 분포 브래그 반사기가 집적된 광대역 파장가변 추출격자 분포 궤환 레이저 다이오드의 파장가변 특성해석

Analysis of Tuning Characteristics of Widely Tunable Sampled Grating Distributed Feedback Laser diode integrated with Sampled Grating Distributed Reflector

  • 김수현 (광운대학교 전자통신공학과) ;
  • 정영철 (광운대학교 전자통신공학과)
  • Kim, Suhyun (Department Electronics and Communication Engineering, Kwangwoon University) ;
  • Chung, Youngchul (Department Electronics and Communication Engineering, Kwangwoon University)
  • 발행 : 2005.10.01
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⟨ 이전 논문 다음 논문 ⟩

초록

본 논문에서는 추출격자 분포 브래그 반사기 (SGDBR: Sampled Grating Distributed Bragg Reflector) 가 집적된 추출격자 분포 궤환 (SGDFB : Sampled Grating Distributed Feedback) 레이저 다이오드의 파장가변 특성을 시뮬레이션을 통하여 분석하였다. SGDFB 영역에 있는 위상제어 영역의 길이는 출력 광 파워와 파장가변 범위에 많은 영향을 미치고 있음을 확인할 수 있었다. 또한 소자의 길이와 단면에서의 반사계수 및 단면의 위치에 의해 전체적인 파장가변 범위가 많은 영향을 받음을 확인하였다.

In this paper, we analyzed tuning characteristics of the widely tunable SGDFB laser diode integrated with SGDBR. The improved time-domain model is used to analyse the laser diode. From the numerical analysis, the length of phase control region in the SGDFB section influences on the output power and the tuning range. Also, it was confirmed that the tuning range is affected by the length of the laser diode, the residual reflectivity at the facet, and the position of the facet.

키워드

참고문헌

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