HEMS 기술을 이용한 180° 하이브리드 결합기가 집적된 단일 평형 혼합기의 설계 및 제작에 관한 연구

Design of the 60 GHz Single Balanced Mixer Integrated with 180° Hybrid Coupler Using MEMS Technology

  • 김성찬 (동국대학교 밀리미터파 신기술연구센터) ;
  • 임병옥 (동국대학교 밀리미터파 신기술연구센터) ;
  • 백태종 (동국대학교 밀리미터파 신기술연구센터) ;
  • 고백석 (동국대학교 밀리미터파 신기술연구센터) ;
  • 안단 (동국대학교 밀리미터파 신기술연구센터) ;
  • 김순구 (동국대학교 밀리미터파 신기술연구센터) ;
  • 신동훈 (동국대학교 밀리미터파 신기술연구센터) ;
  • 이진구 (동국대학교 밀리미터파 신기술연구센터)
  • Kim Sung-Chan (Millimeter-wave INnovation Technology Research Center, MINT, Dongguk University) ;
  • Lim Byeong-Ok (Millimeter-wave INnovation Technology Research Center, MINT, Dongguk University) ;
  • Baek Tae-Jong (Millimeter-wave INnovation Technology Research Center, MINT, Dongguk University) ;
  • Ko Baek-Seok (Millimeter-wave INnovation Technology Research Center, MINT, Dongguk University) ;
  • An Dan (Millimeter-wave INnovation Technology Research Center, MINT, Dongguk University) ;
  • Kim Soon-Koo (Millimeter-wave INnovation Technology Research Center, MINT, Dongguk University) ;
  • Shin Dong-Hoon (Millimeter-wave INnovation Technology Research Center, MINT, Dongguk University) ;
  • Rhee Jin-Koo (Millimeter-wave INnovation Technology Research Center, MINT, Dongguk University)
  • 발행 : 2005.07.01

초록

본 논문에서는 표면 MEMS 기술을 이용하여 제작된 $180^{\circ}$ 하이브리드 결합기가 집적된 60 GHz 대역의 단일평형 혼합기를 설계$\cdot$제작하였다. 혼합기에 사용된 $180^{\circ}$ 하이브리드 결합기는 substrate에 의한 dielectric loss를 최소화하기 위하여 polyimide dielectric을 지지대로 사용하여 신호선이 공기 중에 떠 있는 형태의 마이크로스트립 라인을 이용하여 설계하였으며, 이때 지지대의 높이는 $10{\mu}m$이고 면적은 $20{\mu}m{\times}20{\mu}m$을 사용하였다. 제작된 혼합기 의 측정 결과, LO 주파수가 58 GHz에서 LO power가 7.2 dBm 57 GHz에서 RF power가 -15 dBm 일 때, 15.5 dB의 변환 손실과 -40 dB의 RF-LO isolation 특성을 얻었다. 본 논문에서 제안된 혼합기는 RF MEMS 수동 소자를 MMIC와 집적화 함으로써 칩 성능의 감소 없이 크기를 줄일 수 있다는 장점을 가지고 있다.

In this paper, we have developed a new type of single balanced mixer with the RF MEMS $180^{\circ}$ hybrid coupler using surface micromachining technology. The $180^{\circ}$ hybrid coupler in this mixer is composed of the dielectric-supported air gapped microstriplines(DAMLs) which have signal line with $10{\mu}m$ height to reduce substrate dielectric loss and dielectric posts with size of $20{\mu}m{\times}20{\mu}m$ to elevate the signal line on air with stability At LO power of 7.2 dBm, the conversion loss was 15.5 dB f3r RF frequency or 57 GHz and RF power of -15 dBm. Also, we obtained the good RF to LO isolation of -40 dB at LO frequency of 58 GHz and LO power of 7.2 dBm. The main advantage of this type of mixer is that we are able to reduce the size of the chips due to integrating the MEMS passive components.

키워드

참고문헌

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