Journal of the Microelectronics and Packaging Society (마이크로전자및패키징학회지)
- Volume 12 Issue 2 Serial No. 35
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- Pages.129-134
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- 2005
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- 1226-9360(pISSN)
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- 2287-7525(eISSN)
Electroplating of Copper Using Pulse-Reverse Electroplating Method for SiP Via Filling
펄스-역펄스 전착법을 이용한 SiP용 via의 구리 충진에 관한 연구
- Bae J. S. (Department of Materials Science and Engineering, Hongik University) ;
- Chang G H. (Department of Materials Science and Engineering, Hongik University) ;
- Lee J. H. (Department of Materials Science and Engineering, Hongik University)
- Published : 2005.06.01
Abstract
Electroplating copper is the important role in formation of 3D stacking interconnection in SiP (System in Package). The I-V characteristics curves are investigated at different electrolyte conditions. Inhibitor and accelerator are used simultaneously to investigate the effects of additives. Three different sizes of via are tested. All via were prepared with RIE (reactive ion etching) method. Via's diameter are 50, 75,
SiP의 3D패키지에 있어서 구리도금은 매우 중요한 역할을 한다 이러한 구리 도금의 조건을 알아보기 위하여 조건이 다른 전해질에서 전기화학적 I-V특성을 분석하였다. 첨가제로 억제제와 촉진제의 특성을 분석하였다. 3D 패키지에 있어서 직경 50, 75,