Journal of the Microelectronics and Packaging Society (마이크로전자및패키징학회지)
- Volume 12 Issue 1 Serial No. 34
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- Pages.77-85
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- 2005
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- 1226-9360(pISSN)
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- 2287-7525(eISSN)
Interfacial Electrical/Dielectric Characterization in Low Temperature Polycrystalline Si
- Hwang, Jin-Ha (Dept. of Materials Science and Engineering, College of Engineering, Hongik University)
- Published : 2005.03.01
Abstract
Impedance spectroscopy was applied to low temperature polycrystalline Si in order to investigate the electrical/dielectric information in polycrystalline Si. By combined microstructure and impedance spectroscopy works, it was shown that the electrical information is sensitive to the corresponding microstructure, i.e., the grain size and distribution, judged from the capacitance vs. grain size relationship. At
Keywords
- Impedance spectroscopy;
- Electrical/dielectric properties;
- Polycrystalline;
- Silicon;
- Microstructure;
- Thin Film transistors