마이크로전자및패키징학회지 (Journal of the Microelectronics and Packaging Society)
- 제12권1호
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- Pages.21-26
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- 2005
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- 1226-9360(pISSN)
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- 2287-7525(eISSN)
Preparation of Field Effect Transistor with $(Bi,La)Ti_3O_{12}$ Gate Film on $Y_2O_3/Si$ Substrate
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Chang Ho Jung
(Department of Electronics Engineering, Dankook University) ;
- Suh Kwang Jong (Department of Electrical and Electronics Engineering, Toyohashi University of Technology) ;
- Suh Kang Mo (Department of Electronics Engineering, Dankook University) ;
- Park Ji Ho (Department of Electronics Engineering, Dankook University) ;
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Kim Yong Tae
(Semi-conductor Materials and Devices Lab., Korea Institute of Science and Technology) ;
- Chang Young Chul (School of Mechatronics Engineering, Korea University of Technology and Education)
- 발행 : 2005.03.01
초록
The field effect transistors (FETs) were fabricated ell