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Synthesis and Characterization of Gallium Nitride Powders and Nanowires Using Ga(S2CNR2)3(R = CH3, C2H5) Complexes as New Precursors

  • Jung, Woo-Sik (School of Chemical Engineering and Technology, College of Engineering, Yeungnam University) ;
  • Ra, Choon-Sup (Department of Chemistry, Yeungnam University) ;
  • Min, Bong-Ki (Instrumental Analysis Center, Yeungnam University)
  • 발행 : 2005.01.20

초록

Gallium nitride (GaN) powders and nanowires were prepared by using tris(N,N-dimethyldithiocarbamato)gallium(III) (Ga(DmDTC)$_3$) and tris(N,N-diethyldithiocarbamato)gallium(III) (Ga(DeDTC)$_3$) as new precursors. The GaN powders were obtained by reaction of the complexes with ammonia in the temperature ranging from 500 to 1100 ${^{\circ}C}$. The process of conversion of the complexes to GaN was monitored by their weight loss, XRD, and $^{71}$Ga magic-angle spinning (MAS) NMR spectroscopy. Most likely the complexes decompose to $\gamma$ -Ga$_2$S$_3$ and then turn into GaN via amorphous gallium thionitrides (GaS$_x$N$_y$). The reactivity of Ga(DmDTC)$_3$ with ammonia was a little higher than that of Ga(DeDTC)$_3$. Room-temperature photoluminescence spectra of asprepared GaN powders exhibited the band-edge emission of GaN at 363 nm. GaN nanowires were obtained by nitridation of as-ground $\gamma$ -Ga$_2$S$_3$ powders to GaN powders, followed by sublimation without using templates or catalysts.

키워드

참고문헌

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피인용 문헌

  1. Powder‐XRD and 14N magic angle‐spinning solid‐state NMR spectroscopy of some metal nitrides vol.54, pp.5, 2005, https://doi.org/10.1002/mrc.4395
  2. Debye function analysis of nanocrystalline gallium oxide γ-Ga2O3 vol.231, pp.5, 2005, https://doi.org/10.1515/zkri-2015-1895