참고문헌
- L. Stafford, J. Margot, S. Delprat, M. Chaker, and D. Queney, 'Sputter-etching characteristics of bariumstrontium- titanate and bismuth-strontium-tantalate using a surface-wave high-density plasma reactor', J. Vac. Sci. Technol., A 20, No.2, p. 530, 2002
-
S. B. Kim, B. J. Min, D. P. Kim, and C. I. Kim, 'Effect of
$BCI_3$ addition in$Cl_2/Ar $ plasma etching of$(Ba,Sr)TiO_3$ thin films', J. Korean Phys. Soc., Vol. 38, No.3, p. 264, 2001 -
S. K. Choi, D. P. Kim, C. I. Kim, and E. G. Chang, 'Damage in etching of
$(Ba,Sr)TiO_3$ thin films using inductively coupled plasma', J. Vac. Sci. Technol., A 19, No.4, p. 1063, 2001 -
S. G. Lee and S. H. Lee, 'Dielectric properties of
$Nb_2O_5\;doped\;(Ba,Sr,Ca)TiO_3$ thick films for microwave phase shifters', J. Korean Phys. Soc., Vo. 44, No.2, p. 393,2004 -
D. S. Wuu, C. C. Lin, R. H. Horng, F. C. Liao, and Y. H. Liu, 'Etching characteristics and plasmainduced damage of
$high-k\;Ba_{0.5}Sr_{0.5}TiO_3$ thin film capacitors', J. Vac. Sci. Technol., B 19, No.6, p. 2231, 2001 -
D. S. Wuu, F. C. Liano, N. H. Kuo, R. H. Horng, and M. K. Lee, 'Etching characteristics and mechanism of
$Ba_{0.5}Sr_{0.5}TiO_3$ thin films in an inductively coupled plasma', Jpn. J. Appl. Phys., Vol. 39, No. 4B, p. 2068, 2000 -
S. B. Kim, C. I. Kim, E. G. Chang, and G. Y. Yeom, 'Study on surface reaction of
$(Ba,Sr)TiO_3$ . thin films by high density plasma etching', J. Vac. Sci. Technol., A 17, No.4, p. 2156, 1999 - D. R. Lide, CRC Handbook of Chemistry and Physics, CRC Press LLC, p. 4-66, 1998
-
D. P. Kim, K. T. Kim, A. M. Efremov, and C. I. Kim, 'Surface kinetics of
$Bi_{4-x}La_xTi_3O_{12}$ films etched in a$CF_4/Ar$ gas chemistry', J. Korean Phys. Soc., Vol. 44, No.1, p. 1, 2004 -
J. K. Jung and W. J. Lee, 'Dry etching characteristics of
$Pb(Zr,Ti)O_3$ films in$CF_4$ and$Cl_2/CF_4$ inductively coupled plasma', Jpn. J. Appl. Phys., Vol. 40, No. 3A, p. 1408, 2001 - J. L. Vossen and W. Kern, Thin Film Processes, Academic,p. 521, 1978