Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Electrical Characteristics of p+/n Junctions with Cu/Ti-capping/NiSi Electrode

Cu/Ti-cappng/NiSi 전극구조 p+/n 접합의 전기적 특성

  • Lee Keun-Yoo (Dept. of Electronic Materials Engineering, The University of Suwon) ;
  • Kim Ju-Youn (Division of Materials Science and Engineering, Hanyang University) ;
  • Bae Kyoo-Sik (Dept. of Electronic Materials Engineering, The University of Suwon)
  • 이근우 (수원대학교 전자재료공학과) ;
  • 김주연 (한양대학교 재료공학부) ;
  • 배규식 (수원대학교 전자재료공학과)
  • Published : 2005.05.01
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Abstract

Ti-capped NiSi contacts were formed on $p^+/n$ junctions to improve the leakage problem and then Cu was deposited without removing the Ti-capping layer in an attempt to utilize as a diffusion barrier. The electrical characteristics of these $p^+/n$ diodes with Cu/Ti/NiSi electrodes were measured as a function of drive-in RTA(rapid-thermal annealing) and silicidation temperature and time. When drive-in annealed at $900^{\circ}C$, 10 sec. and silicided at $500^{\circ}C$, 100 sec., the diodes showed the most excellent I-V characteristics. Especially, the leakage current was $10^{-10}A$, much lower than reported data for diodes with NiSi contacts. However, when the $p^+/n$ diodes with Cu/Ti/NiSi contacts were furnace-annealed at $400^{\circ}C$ for 40 min., the leakage current increased by 4 orders. The FESEM and AES analysis revealed that the Ti-capping layer effectively prohibited the Cu diffusion, but was ineffective against the NiSi dissociation and consequent Ni diffusion.

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