JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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MTCMOS Post-Mask Performance Enhancement

  • Published : 2004.12.31
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Abstract

In this paper, we motivate the post-mask performance enhancement technique combined with the Multi-Threshold Voltage CMOS (MTCMOS) leakage current suppression technology, and integrate the new design issues related to the MTCMOS technology into the ASIC design methodology. The issues include short-circuit current and sneak leakage current prevention. Towards validating the proposed techniques, a Personal Digital Assistant (PDA) processor has been implemented using the methodology, and a 0.18um process. The fabricated PDA processor operates at 333MHz which has been improved about 23% at no additional cost of redesign and masks, and consumes about 2uW of standby mode leakage power which could have been three orders of magnitude larger if the MTCMOS technology was not applied.

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References

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