JSTS:Journal of Semiconductor Technology and Science

  • 제4권1호
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  • Pages.32-40
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  • 2004
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  • 1598-1657(pISSN)
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  • 2233-4866(eISSN)
대한전자공학회 (The Institute of Electronics and Information Engineers)
권호 표지

Simulation of Quantum Effects in the Nano-scale Semiconductor Device

  • Jin, Seong-Hoon (School of Electrical Engineering and Computer Science, Seoul National University) ;
  • Park, Young-June (School of Electrical Engineering and Computer Science, Seoul National University) ;
  • Min, Hong-Shick (School of Electrical Engineering and Computer Science, Seoul National University)
  • 발행 : 2004.03.31
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초록

An extension of the density-gradient model to include the non-local transport effect is presented. The governing equations can be derived from the first three moments of the Wigner distribution function with some approximations. A new nonlinear discretization scheme is applied to the model to reduce the discretization error. We also developed a new boundary condition for the $Si/SiO_2$ interface that includes the electron wavefunction penetration into the oxide to obtain more accurate C-V characteristics. We report the simulation results of a 25-nm metal-oxide-semiconductor field-effect transistor (MOSFET) device.

키워드

참고문헌

  1. S. Selberherr, Analysis and Simulation of Semiconductor Devices, Wien, Austria: Springer-Verlag, 1984
  2. W. S. Choi, J. G. Ahn, Y. J. Park, H. S. Min, and C. G. Hwang, IEEE Trans. on CAD, vol. 13, no. 7, pp. 899-908, July 1994 https://doi.org/10.1109/43.293947
  3. R. Lake, G. Klimeck, R. C. Bowen, and D. Jovanovic, J. Appl. Phys., vol. 81, no. 12, pp. 7845-7869, June 1997 https://doi.org/10.1063/1.365394
  4. W. R. Frensley, Rev. Mod. Phys., vol. 62, no. 3, pp. 745-791, July 1990 https://doi.org/10.1103/RevModPhys.62.745
  5. E. Wigner, Phys. Rev., vol. 40, pp. 749-759, June 1932 https://doi.org/10.1103/PhysRev.40.749
  6. M. G. Ancona and H. F. Tiersten, Phys. Rev. B, vol. 35, no. 15, pp. 7959-7965, May 1987 https://doi.org/10.1103/PhysRevB.35.7959
  7. M. G. Ancona and G. J. Iafrate, Phys. Rev. B, vol. 39, no. 13, pp. 9536-9540, May 1989 https://doi.org/10.1103/PhysRevB.39.9536
  8. J.-R. Zhou and D. K. Ferry, IEEE Trans. on ED, vol. 39, no. 3, pp. 473-478, March 1992 https://doi.org/10.1109/16.123465
  9. H. L. Grubin, T. R. Govindan, and J. P. Kreskovsky, Solid-State Electronics, vol. 36, no. 12, pp. 1697-1709, 1993 https://doi.org/10.1016/0038-1101(93)90216-D
  10. C. L. Gardner, SIAM Journal on Applied Mathematics, vol. 54, no. 2, pp. 409-427, April 1994 https://doi.org/10.1137/S0036139992240425
  11. D. K. Ferry, R. Akis, and D. Vasileska, Proc. of IEDM, pp. 287-290, December 2000 https://doi.org/10.1109/IEDM.2000.904313
  12. M. G. Ancona, Z. Yu, R. W. Dutton, P. J. V. Voorde, M. Cao, and D. Vook, IEEE Trans. on ED, vol. 47, no. 12, pp. 2310-2319, December 2000 https://doi.org/10.1109/16.887013
  13. Z. Yu, R. W. Dutton, and D. W. Yergeau, Proc. of SISPAD, pp. 1-9, September 2001
  14. D. Connelly, Z. Yu, and D. W. Yergeau, IEEE Trans. on ED, vol. 49, no. 4, pp. 619-626, April 2002 https://doi.org/10.1109/16.992871
  15. E. Lyumkis, R. Mickevicius, O. Penzin, B. Polsky, K. El Sayed, A. Wettstein, and W. Fichtner, Proc. of SISPAD, pp. 271-274, September 2002 https://doi.org/10.1109/SISPAD.2002.1034570
  16. J. R. Watling, A. R. Brown, A. Asenov, A. Svizhenko, and M. P. Anantram, Proc. of SISPAD, pp. 267-270, September 2002 https://doi.org/10.1109/SISPAD.2002.1034569
  17. S. Jin, Y. J. Park, and H. S. Min, Proc. of SISPAD, pp. 263-266, September 2003
  18. M. N. Darwish, J. L. Lentz, M. R. Pinto, P. M. Zeitzoff, T. J. Krutsick, H. H. Vuong, IEEE Trans. on ED, vol. 44, no. 9, pp. 1529-1538, September 1997 https://doi.org/10.1109/16.622611
  19. H. Shin, J. Y. Lee, J.-S. Park, S. Jin, Y. J. Park, and H. S. Min, submitted to IEEE Trans. on ED.
  20. MEDICI User's Manual, Avant! Corp., Feb. 2001
  21. G. Baccarani and M. Wordeman, Solid-State Electronics, vol. 28, no. 4, pp. 407-416, 1985 https://doi.org/10.1016/0038-1101(85)90100-5
  22. D. A. Antoniadis, I. J. Djomehri, K. M. Jackson, and S. Miller, Well-Tempered Bulk-Si NMOSFET Device Home Page, http://www-mtl.mit.edu/Well/, Microsystems Technology Laboratory, MIT
  23. Y. Taur, C. H. Wann, and D. J. Frank, Proc. of IEDM, pp. 789-792, December 1998 https://doi.org/10.1109/IEDM.1998.746474