한국산업융합학회 논문집 (Journal of the Korean Society of Industry Convergence)
- 제7권4호
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- Pages.349-354
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- 2004
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- 1226-833X(pISSN)
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- 2765-5415(eISSN)
Si(111)표면 위에서 Si의 동종층상성장에 관한 연구
The Study of Si homoepitaxial growth on Si(111) Surface
- Kwak, Ho-Weon (Dept. of Visual Optics, kyungwoon University) ;
- moon, Byung-yeon (Dept. of Visual Optics, kyungwoon University)
- 투고 : 2004.06.15
- 심사 : 2004.11.15
- 발행 : 2004.11.30
초록
The growth mode of the Si layers which were grown on Si(111) by using Ag as surfactant were investigated by intensity oscillations of the RHEED specular spot at the different temperatures. we found that the introduction of Ag as the surfactant alters the growth mode from a three-dimensional clustering mechanism to a two-dimensional layer-by-layer growth. In the growth of Si layers on Si(111) with a surfactant Ag, At