Journal of the Korean Society of Industry Convergence (한국산업융합학회 논문집)
- Volume 7 Issue 4
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- Pages.349-354
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- 2004
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- 1226-833X(pISSN)
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- 2765-5415(eISSN)
The Study of Si homoepitaxial growth on Si(111) Surface
Si(111)표면 위에서 Si의 동종층상성장에 관한 연구
- Kwak, Ho-Weon (Dept. of Visual Optics, kyungwoon University) ;
- moon, Byung-yeon (Dept. of Visual Optics, kyungwoon University)
- Received : 2004.06.15
- Accepted : 2004.11.15
- Published : 2004.11.30
Abstract
The growth mode of the Si layers which were grown on Si(111) by using Ag as surfactant were investigated by intensity oscillations of the RHEED specular spot at the different temperatures. we found that the introduction of Ag as the surfactant alters the growth mode from a three-dimensional clustering mechanism to a two-dimensional layer-by-layer growth. In the growth of Si layers on Si(111) with a surfactant Ag, At