한국재료학회지 (Korean Journal of Materials Research)

  • 제14권7호
  • /
  • Pages.516-521
  • /
  • 2004
  • /
  • 1225-0562(pISSN)
  • /
  • 2287-7258(eISSN)
한국재료학회 (Materials Research Society of Korea)
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중수소 프라즈마 처리가 다결정 실리콘 TFT의 안정성에 미치는 영향에 관한 연구

A Study on the Effect of Plasma Deuterium Treatment on Reliability of Poly-Silicon Thin Film Transistors

  • 손송호 (고려대학교 신소재공학과) ;
  • 배성찬 (경북대학교 전자공학과) ;
  • 김동환 (고려대학교 신소재공학과)
  • Sohn Song Ho (Department of Materials Science and Engineering, Korea University) ;
  • Bae S. C. (School of Electronic and Electrical Engineering, Kyungpook National University) ;
  • Kim Donghwan (Department of Materials Science and Engineering, Korea University)
  • 발행 : 2004.07.01
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초록

We applied a deuterium plasma treatment to the surface of polycrystalline silicon films using PECVD and observed the change with AFM, XRD, ET-IR, and SIMS measurement. A bias temperature stressing (BTS) test was carried out to evaluate the reliability of the thin-film transistors (TFT). TFTs with channel lengths as small as 2 ${\mu}m$ were electrically stressed fer up to 1000 sec at room temperature. From the parameter variation such as s-factor, leakage current and on/off ratio, we suggest that the deuterium plasma treatment suppress the hot carrier effect and improve the stability of TFTs.

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참고문헌

  1. Kizilyalli, L. C Lyding and J. W Hess, IEEE Device Research Conference, Digest. 54th Annual, 14, (1996) https://doi.org/10.1109/DRC.1996.546296
  2. Y-J. Tung, J. Boyce, J. Ho, X. Huang and T.-J. King, IEEE Electron Device Lett, 20(8), 387 (1999) https://doi.org/10.1109/55.778150
  3. Y J. Choi, W. K. Kwak, S, Y Yoon, C. O. Kim and J. Jang, Tech. Pap. Digest, SID (San Jose, CA), 508 (1999)
  4. K. S Kim, Master's Thesis, Korea University, (2003)
  5. C. Lombardi, S. Manzini, A. Saporito and M. Vanzi, IEEE Electron Device Lett, 11, 1164 (1988) https://doi.org/10.1109/43.9186
  6. An Shih, S-H Yeh and S-C Lee, J. Appl. Phys, 89(10), 5355 (2001) https://doi.org/10.1063/1.1364645
  7. Y, Zhou and Guanghai XU, International conference of characterization metrology for ULSI technology(Hillsboro, USA), (2003)
  8. K. Cheng, J. Lee and J. W. Lyding, Appl. Phys, 77, 2358 (2000) https://doi.org/10.1063/1.1317546
  9. J.-W. Lee, N.-I. Lee and C.-H. Han, IEEE Electron Device Lett., 20, 12 (1999) https://doi.org/10.1109/55.737558
  10. Alexandre Acovic, Microelectron, Reliab, 36(7/8), 845 (1996) https://doi.org/10.1016/0026-2714(96)00022-4
  11. T. Noguchi. Jpn. J. Appl. Phys, 232, 1584 (1993) https://doi.org/10.1143/JJAP.32.L1584