KIPE Magazine (전력전자학회지)

The Korean Institute of Power Electronics (전력전자학회)
권호 표지

탄화규소(SiC) 전력반도체 현황

  • 김남균 (한국전기연구원 전력반도체그룹) ;
  • 김상철 (한국전기연구원 전력반도체그룹) ;
  • 방욱 (한국전기연구원 전력반도체그룹) ;
  • 김은동 (한국전기연구원 전력반도체그룹)
  • Published : 2004.12.01
Download PDF
⟨ Previous Next ⟩

Abstract

Keywords

References

  1. H. Ohashi. 'Possibility of power electronics Paradigm shift with wide band gap semiconductors', Mater. Sci. Forum, Vol.457-460, pp.21-26(2004)
  2. J .A. Cooper, 'Opportunities and technical strrategies for silicon carbide device development' , Mater. Sci. Forum Vols. 389--393 pp.15-20, 2002
  3. M.K. Das et al., 'High power 4H-SiC PiN diodes with minimal forward voltage drift', Mater. Sci. Forum, Vol.457-460, pp.1105-1108(2004)
  4. Yoon Soo Park Ed. 'SiC Materials and Devices', Academic Press. 1998
  5. T.P. Chow, et al., 'SiC and GaN bipolar power devices', Solid-State Electronics, 44, 277-301, 2000
  6. Y. Sugawara, 'SiC Devices for High Voltage high Power Applications', Mater. Sci. Forum, Vol. 457-460, pp. 963-968(2004)
  7. W. Bahng, N. K. Kim, S. C. Kim, G. H. Song and E. D. Kim, 'Suppression of macrostep formation in 4H-SiC using a cap oxide layer, Mater. Sci. Forum, 368-372, 2002
  8. C.E. Weitzel et al., 'Silicon carbide high-power devices', IEEE Trans. Electron Devices, Vol. 43, No. 10, 1732-1741, 1996
  9. Y. Sugawara et al., '12-19kV 4H-SiC PiN diodes with Low power loss', 13th ISPSD, Osaka, Japan, June 4-7,2001
  10. H. M. McGlothlin et al.. '4 kV Silicon Carbide Schottky Diodes for High-Frequency Switching Applications:' IEEE Device Research Conf., Santa Barbara, CA June 28 - 30, 1999
  11. Tairov, Yu. M.. and Tsvetkov, V. F. 'General principals of growing large-size single crystals of various silicon carbide polytypes.' J. Cryst. Growth 52 146 (1981)
  12. V. Saxena, J. Nong, and A. Steck!, 'High-Voltage Ni- and Pt-SiC Schottky Barrier Diodes utilizing Metal Field Plated Termination', IEEE Trans. Electron Dev. 46[3] 456-64(1999)
  13. 한국전기연구원, ‘SiC 반도체 기술개발 기획연구’ . 산업자원부 연구보고서, 1999
  14. 한국전기연구원, ‘SiC 반도체 기술개발 제 2단계 연구 결과 보고서’ . 산업자원부 연구보고서, 2004
  15. R. Singh and J. Richmond, ‘SiC Power Schottky Diodes in Power Factor Correction Circuits‘, Cree Application note.