Journal of the Korean Ceramic Society (한국세라믹학회지)

The Korean Ceramic Society (한국세라믹학회)
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Effect of Boron Concentration on the UV Photosensitivity of Silica Glass Film for Planar Lightwave Circuit

Boron 첨가량이 평면광회로용 실리카 박막의 UV 감광성에 미치는 영향

  • 권기열 (한양대학교 세라믹공학과) ;
  • 조승현 (한양대학교 세라믹공학과) ;
  • 신동욱 (한양대학교 세라믹공학과) ;
  • 송국현 (산업자원부 기술표준원 디지털표준과) ;
  • 이낙규 (한국생산기술연구원 생산기술센터) ;
  • 나경환 (한국생산기술연구원 생산기술센터)
  • Published : 2004.11.01
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Abstract

In this study, photosensitivity dynamics in SiO$_2$ glass with the composition similar to that of silica Planar Lightwave Circuit (PLC) devices was investigated as a fundamental study prior to the device fabrication. Silica bulk glasses with similar composition to the core layer of PLC devices were prepared with variable composition of B$_2$O$_3$. The photosensitivity in boron and germanium co-doped SiO$_2$ glass yields refractive index change $\Delta$n as high as 10$\^$-3/. However such index modulation disappeared after annealing. From the result of annealing experiment and W absorption / Raman spectra, we conclude the compaction model is applicable to our glass system.

본 연구에서는 PLC 소자용 브래그 격자에 적용되는 재료인 Ge, B 등이 다량 첨가되어 있는 실리카 유리에서 발생하는 감광성(photosensitivity)을 조사하고 감광성의 발현 기구를 연구하였다. 관찰된 굴절률 변화의 최대값은 약 $10^{-3}$ 정도였으며 열처리 과정을 거치기 전후에 이러한 굴절률의 변화 양상이 변화하는 것을 관찰하였다. 이와 같은 굴절률의 변화를 UV 흡수도와 라만 스펙트림을 이용하여 본 연구의 시편에서 발생하는 감광성의 기구를 규명한 결과 굴절률 변화 요인이 유리 내에 존재하는 내부응력과 첨가된 B에 의하여 증대된 고밀화 과정에서 발생하는 현상임을 밝혔다.

Keywords

References

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