초록
우수한 압전 특성을 나타내는 것으로 알려진 Mn 첨가 PMN-PZT의 저온소결 첨가제가 실험되었다. 저온소결 첨가제로는 B$_2$O$_3$가 사용되었고 소결온도와 B$_2$O$_3$ 첨가량의 변화가 소결성과 유전 및 압전특성의 변화에 미치는 영향을 조사하였다. B$_2$O$_3$ 첨가량과 소결온도를 변화시킨 결과 B$_2$O$_3$ 첨가량 2wt% 이하 100$0^{\circ}C$이하 조건에서 소결밀도가 증가하여 B$_2$O$_3$가 저온소결재로 작용하였다. 그러나 10$50^{\circ}C$ 이상에서는 주조성인 PMN-PZT보다 낮은 소결밀도를 나타내었다. B$_2$O$_3$ 첨가에 따른 유전상수($\varepsilon$$_{33}$ $^{T}$ )의 변화를 확인할 결과 B$_2$O$_3$ 2wt% 100$0^{\circ}C$ 조건에서 1000의 유전율을 나타내었다. B$_2$O$_3$ 첨가량이 전기-기계 결합계수(k$_{p}$ )와 압전상수(d$_{33}$ )에 큰 저하를 가져오지 않는 B$_2$O$_3$ 첨가 한계는 2wt% 이하로 나타났다. 이때, k$_{p}$ 는 약 50%, d$_{33}$ 는 약 300(${\times}$$10^{-12}$ C/N) 정도의 값을 얻을 수 있었다. B$_2$O$_3$ 첨가는 기계적 품질계수(Q$_{m}$ )의 증가를 가져왔으며 0.5wt% B$_2$O$_3$ 첨가 110$0^{\circ}C$ 소결 조건에서 1700의 품질계수를 나타내었다. 유전손실은 B$_2$O$_3$ 첨가에 따라 큰 변화 없이 0.5% 이하의 값으로 나타났다.
The additive of low temperature sintering in Mn-doped PMN-PZT known as high piezoelectric materials was studied in this experiment. B$_2$O$_3$ was used for the additive of low temperature sintering. The effects of sintering temperature in dielectric, and piezoelectric properties were investigated with the amounts of B$_2$O$_3$. Sintered density was increased in comparison with no addition and under 2wt% B$_2$O$_3$ and lower sintering temperature than 100$0^{\circ}C$. Therefore, in the low sintering temperature, the densification was improved by the addition of the B$_2$O$_3$. However, the sintering density was lower than that of the main composition in the case of the sintered at over 10$50^{\circ}C$. Dielectric constant with the addition of B$_2$O$_3$ was evaluated. The dielectric constant was 1000 2 wt% of B$_2$O$_3$ and sintered at 100$0^{\circ}C$. Under 2wt% of B$_2$O$_3$, the electromechanical coupling factor and the piezoelectric constant were not so much decreased. The electromechanical coupling factor and the piezoelectric constant were 50% and 300(${\times}$10$^{-12}$ C/N) respectively. The mechanical quality factor was increased with B$_2$O$_3$. The mechanical quality factor was 1700 at 0.5wt% B$_2$O$_3$ and sintered at 110$0^{\circ}C$. Dielectric loss was less than 0.5% regardless of the amount of B$_2$O$_3$.