반도체디스플레이기술학회지 (Journal of the Semiconductor & Display Technology)
- 제3권4호
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- Pages.29-32
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- 2004
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- 1738-2270(pISSN)
SOI 소자 셀프-히팅 효과의 3차원적 해석
Three-Dimensional Analysis of Self-Heating Effects in SOI Device
초록
Fully depleted Silicon-on-Insulator (FD-SOI) devices lead to better electrical characteristics than bulk CMOS devices. However, the presence of a thin top silicon layer and a buried SiO2 layer causes self-heating due to the low thermal conductivity of the buried oxide. The electrical characteristics of FDSOI devices strongly depend on the path of heat dissipation. In this paper, we present a new three-dimensional (3-D) analysis technique for the self-heating effect of the finger-type and bar-type transistors. The 3-D analysis results show that the drain current of the finger-type transistor is 14.7% smaller than that of the bar-type transistor due to the 3-D self-heating effect. We have learned that the rate of current degradation increases significantly when the width of a transistor is smaller that a critical value in a finger-type layout. The current degradation fro the 3-D structures of the finger-type and bar-type transistors is investigated and the design issues are also discussed.