Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Microstructure and Microwave Dielectric Properties of (1-x)Mg4Ta2O9-xTiO2(x=0\sim0.9) Ceramics

(1-x)Mg4Ta2O9-xTiO2(x=0\sim0.9)세라믹스의 미세구조와 마이크로파 유전 특성

  • 김재식 (광운대학교 전자재료공학과) ;
  • 최의선 (광운대학교 전자재료공학) ;
  • 이문기 (광운대학교 전자재료공학) ;
  • 류기원 (여주대학 디지털정보전자) ;
  • 이영희 (광운대학교 전자재료공학과)
  • Published : 2004.08.01
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Abstract

The microstructure and microwave dielectric properties of $(1-x){Mg}_4{Ta}_2{O}_9-xTi{O}_2(x=0\sim0.9)$ ceramics were investigated. The specimens were prepared by the conventional mixed oxide method with sintering temperature of 140$0^{\circ}C$∼150$0^{\circ}C$. To improve the quality factor and the temperature coefficient of resonant frequency,$ Ti{O}_2(\varepsilon\Gamma=100, Q\times f_\Gamma=40,000 GHz,\ta_f= +450 ppm\diagup^{\circ}C $ was added in ${Mg}_4{Ta}_2{O}_9$ceramics. The dielectric and structural properties were investigated. According to the XRD patterns, $(1-x){Mg}_4{Ta}_2{O}_9-xTi{O}_2(x=0\sim0.9)$ ceramics had the ${Mg}_4{Ta}_2{O}_9$ phase(hexagonal) and ${MgTi}_2{O}_5$phase(orthorhombic). The dielectric constant($\varepsilon_r$). quality($Qtimes{f}_r$${\tau}_f$) of the $(1-x){Mg}_4{Ta}_2{O}_9-xTi{O}_2(x=0\sim0.9)$ ceramics were 8.12∼18.59, 18,750∼186,410 GHz and －36.02∼＋3.46 ppm/$^{\circ}C$, respectively.

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References

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