Journal of the Korean Ceramic Society (한국세라믹학회지)

The Korean Ceramic Society (한국세라믹학회)
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Sulfuric Acid Treatment of Sapphire Substrates for Growth of High-Quality Epilayers

  • Park, Ji-Won (Thin Film Materials Research Center, Korea Institute of Science and Technology) ;
  • No, Young-Soo (Thin Film Materials Research Center, Korea Institute of Science and Technology, Division of Electrical and Computer Engineering, Hanyang University) ;
  • Jung, Yeon-Sik (Thin Film Materials Research Center, Korea Institute of Science and Technolog) ;
  • Yoon, Seok-Jin (Thin Film Materials Research Center, Korea Institute of Science and Technolog) ;
  • Kim, Tae-Whan (Division of Electrical and Computer Engineering, Hanyang University) ;
  • Park, Won-Kook (Thin Film Materials Research Center, Korea Institute of Science and Technology)
  • Published : 2004.07.01
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Abstract

The chemical etching of sapphire substrates was peformed to produce smooth surfaces on an atomic scale. The sapphire sur-face etched by using a $H_2$S $O_4$ solution showed a pit-free morphology and was yen smooth as much as $\sigma$$_{rms}$=0.13 nm, that etched by using a mixture of $H_2$S $O_4$ and $H_3$P $O_4$ contained large pits with $\sigma$$_{rms}$=0.34 nm. The $\sigma$$_{rms}$’s and the number of the pits increased with increasing etching temperature. The sapphire etched by using $H_2$S $O_4$ at 32$0^{\circ}C$ had the best surface. These results provide important information on the effects of etching treatment on the structural properties of sapphire for the growth of high-quality epilayers.ayers.

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References

  1. Appl. Phys. Lett. v.70 Room-Temperature Continuous-Wave Operation of InGaN Multi-Quantum-Well Structure Laser Diodes with a Life-time of 27 h S. Nakamura;M. Senoh;S. Nagahama;N. Iwasa;T. Yamada;T. Matsushita;Y. Sugimoto;H. Kiyoku https://doi.org/10.1063/1.118593
  2. Appl. Phys. Lett. v.15 no.10 The Preparation and Properties of Vapor-Deposited Single-Crystal-Line GaN H. P. Maruska;J. J. Tietjen https://doi.org/10.1063/1.1652845
  3. J. Crys. Growth v.231 The Impact of Initial Growth and Substrate Nitridation on Thick GaN Growth on Sapphire by Hydride Vapor Phase Epitaxy S. Gu;R. Zhang;Y. Shi;T.Zheng;L. Zhang;F. Dwikusuma;T. F. Kuech https://doi.org/10.1016/S0022-0248(01)01464-6
  4. J. Kor. Ceram. Soc v.40 Growth of Heteroepitaxial ZnO Thin Film by off-axis Magnetron Sputtering J. W. Park;J. W. Park;J. K. Lee https://doi.org/10.4191/KCERS.2003.40.3.262
  5. Jpn. J. Appl. Phys. Part 1 v.37 Substrate Reactivity and "Controlled Contamination" in Metalorganic Chemical Vapor Deposition of GaN on Sapphire Y. Golan;P. Fini;S. P. Denbaars;J. S. Speck https://doi.org/10.1143/JJAP.37.4695
  6. Appl. Phys. Lett. v.71 Preconditioning of C-Plane Sapphire for GaN Epitaxy by Radio Frequency Plasma Nitridation C. Heilein;J. Grepstad;T. Berge;H. Riechert https://doi.org/10.1063/1.119532
  7. J. Electrochem. Soc. v.149 Study on Sapphire Surface Preparation for III-Nitride Heteroepitaxial Growth by Chemeical Treatments F. Dwikusuma;D. Saulys;T. F. Kuech https://doi.org/10.1149/1.1509072
  8. J. Electrochem. Soc. v.118 The Chemical Polishing of Sappire and MgAl Spinel A. Reisman;M. Berkenblit;J. Cuomo;S. A. Chan https://doi.org/10.1149/1.2407804
  9. Env. Sci. Tech. v.31 Effect of Sulfate on the Release Rate of $Al^{3+}$ from Gibbsite in Low-temperature Acidic Waters M. K. Ridley;D. J. Wesolowski;D. A. Palmer;P. Benezeth;R. M. Kettler https://doi.org/10.1021/es960686o