The Transactions of the Korean Institute of Electrical Engineers C (대한전기학회논문지:전기물성ㆍ응용부문C)

The Korean Institute of Electrical Engineers (대한전기학회)
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A New Dual Gate Transistor Employing Thyristor Action

사이리스터 동작을 이용한 새로운 이중 게이트 트랜지스터

  • Published : 2004.07.01
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Abstract

A new 600 V dual gate transistor employing thyristor action, which incorporates floating PN junction and trench gate IGBT, is proposed to improve the forward current-voltage characteristics and the short circuit ruggedness. Our two-dimensional numerical simulation shows that the proposed device exhibits low forward voltage drop and eliminates the snapback phenomena compared with conventional trench gate IGBT and EST The proposed device achieves high current saturation characteristics by separating floating N+ emitter and cathode. The proposed device achieves low saturation current value compared with conventional devices, and the short-circuit ruggedness is improved. The proposed device may be suitable for the use of high voltage switching applications.

Keywords

References

  1. B. J. Baliga, M. S. Adler, p. V. Gray, R. Love, and N. Zommer, 'The insulated gate transistor', IEEE Int. Electron Devices Meeting Dig., pp.264-267, 1982
  2. J. P. Russel, A. M. Goodman, L. A. Goodman, and J. M. Nielson, 'The COMFET', IEEE Electron Device Lett., Vol.EDL-4, pp.63-65, 1983
  3. V.A.K.Temple, 'MOS-controlled thyristors-A new class of power devices' IEEE Trans. Electron Devices, Vol.ED-33, No.10, pp.1609-1618, Oct. 1986
  4. F. Bauer and P. Roggwiler, 'Design aspects of MOS controlled thyristor elements', IEEE Int. Electron Devices Meeting Dig., PP. 297-300, 1987 https://doi.org/10.1109/IEDM.1989.74283
  5. B. J Baliga, 'The MOS-gated emitter switched thyristor', IEEE Electron Device Lett., vol. 11, no. 2, pp. 75-77, Feb., 1990 https://doi.org/10.1109/55.46933
  6. M. S. Shekar, B. J Baliga, M. Nandakumar, S. Tandon, and A. Reisman, 'Characteristics of the emitter switched thyristor', IEEE Trans. Electron Devices, vol. 38, no. 7, pp. 1619-1623, July, 1991 https://doi.org/10.1109/16.85158
  7. A. Bhalla and T. P. Chow, '550 V, N-channel emitter switched thyristors with an atomic lattice layout geometry', IEEE Electron Device Lett., vol. 15, no. 11, pp. 452-454, Nov. 1994 https://doi.org/10.1109/55.334664
  8. S. Sridhar and B. J. Baliga, 'The dual gate emitter switched thyristor (DG-EST)', IEEE Electrion Device Lett., vol. 17, no. 1, jan., pp. 25-27, 1996 https://doi.org/10.1109/55.475566
  9. M. S. Shekar, J. Korec and B. J. Baliga, 'Trench gate emitter switched thyristors', Proc. of 1994 Internal Symposium on Power Semiconductor Devices & IC's, pp. 189-194, 1994 https://doi.org/10.1109/ISPSD.1994.583706
  10. M. S. Shekar, J. Korec and B. J. Baliga, 'A new trench gate accumulation mode field effect emitter switched thyristor', Proc. of 1995 Internal Symposium on Power Semiconductor Devices & IC' s, pp. 185-189, 1995 https://doi.org/10.1109/ISPSD.1995.515032
  11. S. Sridhar and B. J. Baliga, 'The SIMEST: a new EST structure without parasitic thyristor achieved using SIMOX technology', Proc. of 1996 Internal Symposium on Power Semiconductor Devices & IC's, pp. 283-286, 1996 https://doi.org/10.1109/ISPSD.1996.509500
  12. ISE-TCAD, User's manual 8.0
  13. J. Jo, J. Park, H. J. Kim, S. H. Lee, Z. Y. Shen, and Y. Nishihara, 'Lifetime control by low energy electron irradiation and hydrogen annealing', Device Research Conference 2000 Digest, pp. 61-62, 2000 https://doi.org/10.1109/DRC.2000.877089
  14. A. Bhalla and T. P. Chow, 'Dual lateral channel emitter switched thyristor characteristics: dependence on floating emitter length', IEEE Electron Device Lett., vol. 16, no. 1, Jan., 1995 https://doi.org/10.1109/55.363217
  15. Rahul S. Chokhawala, Jamie Catt, Laszlo Kiraly, 'A Discussion on IGBT short-circuit behavior and fault protection schemes', IEEE Trans. INDUSTRY APPLICATIONS, vol. 31, no. 2, March! April, 1995 https://doi.org/10.1109/28.370271
  16. Chong Man Yun, Hyun Chul Kim, Kyu Hyun Lee, Joo Il Kim and Tae-Hoon Kim, 'Comparison of stripe and cellular geometry for short circuit rated trench IGBT', Proc. of 2000 International Symposium on Power Semiconductor Devices & IC's, pp. 275-278, 2000 https://doi.org/10.1109/ISPSD.2000.856824