A New Dual Gate Transistor Employing Thyristor Action

사이리스터 동작을 이용한 새로운 이중 게이트 트랜지스터

  • Published : 2004.07.01

Abstract

A new 600 V dual gate transistor employing thyristor action, which incorporates floating PN junction and trench gate IGBT, is proposed to improve the forward current-voltage characteristics and the short circuit ruggedness. Our two-dimensional numerical simulation shows that the proposed device exhibits low forward voltage drop and eliminates the snapback phenomena compared with conventional trench gate IGBT and EST The proposed device achieves high current saturation characteristics by separating floating N+ emitter and cathode. The proposed device achieves low saturation current value compared with conventional devices, and the short-circuit ruggedness is improved. The proposed device may be suitable for the use of high voltage switching applications.

Keywords

References

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