Journal of Surface Science and Engineering (한국표면공학회지)

The Korean Institute of Surface Engineering (한국표면공학회)
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Dependance of the Process Parameters on the Characteristic of the ITO Thin Films

ITO 박막의 공정변수에 따른 특성 연구

  • 김소라 (한국기술교육대학교, 신소재공학과) ;
  • 서정은 (한국기술교육대학교, 신소재공학) ;
  • 김상호 (한국기술교육대학교, 신소재공학과)
  • Published : 2004.06.01
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Abstract

ITO thin film was deposited on the glass by RF magnetron sputtering. Dependance of the process parameters such as thickness, target-to-substrate distance, substrate temperature and oxygen partial pressure on the transmittance and electrical resistance of ITO film were investigated. The deposition conditions for getting better optical and electrical ITO characteristics were the 1800-$2300\AA$ thickness, 65mm substrate-to-target distance, $350^{\circ}C$ substrate temperature and 8% oxygen partial pressure. At these conditions, the transmittance and sheet resistance of the ITO film were 83.3% and 77.86Ω/$\square$, respectively.

Keywords

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