Journal of Magnetics

  • 제9권1호
  • /
  • Pages.23-26
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  • 2004
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  • 1226-1750(pISSN)
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  • 2233-6656(eISSN)
한국자기학회 (The Korean Magnetics Society)
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Relative Magneto-current of Magnetic Tunnel Transistor with Amorphous n-type Si Film

  • Lee, Sang-Suk (Department of Computer and Electronic Physics, Sangji University) ;
  • Lee, Jin-Yong (Department of Computer and Electronic Physics, Sangji University) ;
  • Hwang, Do-Guwn (Department of Computer and Electronic Physics, Sangji University)
  • 발행 : 2004.03.01
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초록

A magneto-current (MC) was investigated for magnetic tunnel transistor (MTT) with amorphous n-type Si film. A relative MC (more than 49.6%) was observed at an emitter-base bias voltage ($V_{EB}$) of 0.65 V at room temperature. Above a $V_{EB}$ of 0.70 V, however, a rapid decrease in MC was observed in the amorphous Si-based MTT. The collector current increasing and transfer ratio as emitter-base voltage were mainly due to the rapid creation electrons of conduction band states in the Si collector. This approach would make integration in various components and systems easier than a MTT grown on a semiconductor wafer.

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