수정된 TFA-MOD법에 의한 (100) $SrTiO_3$ 단결정 기판 위 고 임계전류 밀도 $YBa_2Cu_3O_{7-{\delta}}$ 박막 제조

Fabrication of high-$J_c$ $YBa_2Cu_3O_{7-{\delta}}$ thin films on (100) $SrTiO_3$ single crystal substrates by a modified TFA-MOD method

  • 위성훈 (서울대 재료공학부) ;
  • 신거명 (서울대 재료공학부) ;
  • 송규정 (한국전기연구원 초전도재료연구그룹) ;
  • 홍계원 (한국산업기술대학교 에너지대학원) ;
  • 문승현 (서울대학교 재료공학부) ;
  • 박찬 (한국전기연구원 초전도재료연구그룹) ;
  • 유상임 (서울대학교 재료공학과)
  • 발행 : 2004.03.01

초록

High critical current density. $J_c$ over $1MA/cm^2$ at 77 K in a self field was successfully achieved from the YBCO film prepared on (100) $SrTiO_3$ single-crystal substrates by the TFA-MOD process. Unlike a normal TFA-MOD process, we prepared the TFA precursor solution by dissolving YBCO powder into the trifluoroacetic acid. A significant amount of the second phases, including $BaF_2$, was observed in the films fired at $700-725^{\circ}C$ for 2 h under $P(O_2)=10^{-3}$ atm and $P(H_2O)=4.2%$, most probably due to an insufficient reaction time, and hence $T_c$ was greatly degraded. However the films fired at $750-800^{\circ}C$ for 2 h were composed of strongly c-axis oriented YBCO grams without any second phases. and exhibited the $T_c$ values of 89.5 ~ 91 K with a sharp transition. With increasing the firing temperature from 750 to $800^{\circ}C$ average grain size of YBCO was increased and grain connectivity was enhanced. The highest $J_c$ value of $1.1MA/cm^2$ was obtained from the YBCO film fired at $800^{\circ}C$.

키워드

참고문헌

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