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Fabrication of Integrated Triode-type CNT Field Emitters

집적화된 3 극형 탄소 나노 튜브 전자 방출원의 제작

  • 이정아 (한국과학기술연구원 마이크로시스템 연구센터) ;
  • 문승일 (한국과학기술연구원 마이크로시스템 연구센터) ;
  • 이윤희 (고려대학교 물리학과) ;
  • 주병권 (한국과학기술연구원 마이크로시스템 연구센터)
  • Published : 2004.02.01

Abstract

In this paper, we have fabricated a triode field emitter using carbon nanotubes (CNTs) directly grown by thermal chemical vapor deposition(CVD) method as an electron omission source. Vertically aligned CNTs have been grown in the center of the gate hole, to the size of 1.5 ${\mu}{\textrm}{m}$ in diameter, with help of a sacrificial layer of a type generally used in metal tip process. By the method of tilling the substrate, we made CNTs emitters both with and without SiO$_2$layer, a sidewall protector, deposited on sidewall of gate. After that we researched the electrical characteristics about two types of emitters. In effect, a sidewall protector can enhance the electrical characteristics by suppressing the problem of short circuits between the gate and the CNTs. The leakage current of an emitter with a sidewall protector is approximately sevenfold lower than that of an emitter without it at a gate voltage of 100 V.

Keywords

References

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