ETRI Journal

  • 제26권4호
  • /
  • Pages.307-314
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  • 2004
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  • 1225-6463(pISSN)
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  • 2233-7326(eISSN)
한국전자통신연구원 (Electronics and Telecommunications Research Institute)
권호 표지

Application of GaAs Discrete p-HEMTs in Low Cost Phase Shifters and QPSK Modulators

  • Kamenopolsky, Stanimir D. (RF Design Team, Sky Gate Ltd.)
  • 투고 : 2003.12.02
  • 발행 : 2004.08.31
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초록

The application of a discrete pseudomorphic high electron mobility transistor (p-HEMT) as a grounded switch allows for the development of low cost phase shifters and phase modulators operating in a Ku band. This fills the gap in the development of phase control devices comprising p-i-n diodes and microwave monolithic integrated circuits (MMICs). This paper describes a discrete p-HEMT characterization and modeling in switching mode as well as the development of a low-cost four-bit phase shifter and direct quadrature phase shift keying (QPSK) modulator. The developed devices operate in a Ku band with parameters comparable to commercially available MMIC counterparts. Both of them are CMOS compatible and have no power consumption. The parameters of the QPSK modulator are very close to the requirements of available standards for satellite earth stations.

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참고문헌

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