Journal of Sensor Science and Technology (센서학회지)

The Korean Sensors Society (한국센서학회)
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Development of the High Temperature Silicon Pressure Sensor

고온용 실리콘 압력센서 개발

  • Kim, Mi-Mook (School of Electrical Engineering and Computer Science) ;
  • Nam, Tae-Chul (School of Electrical Engineering and Computer Science) ;
  • Lee, Young-Tae (Department of Electronics Engineering Education)
  • 김미목 (영남대학교 전자정보공학부) ;
  • 남태철 (영남대학교 전자정보공학부) ;
  • 이영태 (안동대학교 정보전자공학교육과)
  • Published : 2004.05.31
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Abstract

A pressure sensor for high temperature was fabricated by using a SDB(Silicon-Direct-Bonding) wafer with a Si/$SiO_{2}$/ Si structure. High pressure sensitivity was shown from the sensor using a single crystal silicon of the first layer as a piezoresistive layer. It also was made feasible to use under the high temperature as of over $120^{\circ}C$, which is generally known as the critical temperature for the general silicon sensor, by isolating the piezoresistive layer dielectrically and thermally from the silicon substrate with a silicon dioxide layer of the second layer. The pressure sensor fabricated in this research showed very high sensitivity as of $183.6{\mu}V/V{\cdot}kPa$, and its characteristics also showed an excellent linearity with low hysteresis. This sensor was usable up to the high temperature range of $300^{\circ}C$.

Keywords

References

  1. Y. T. Lee, H. D. Seo, M. Ishida, S. Kawahito, and T. Nakamura, 'High temperature pressure sensor using double SOI structures with two $Al_2O_3$, films', Sensors and Actuators, vol. 43, pp. 59-64, 1994 https://doi.org/10.1016/0924-4247(94)80001-4
  2. M. Ishida, Y. T. Lee, T. Higasgino, H. D. S대, and T. Nakamura, 'Double SOI structure and device applications with heteroepitaxial $Al_2O_3$ and Si', Jpn. J. Appl. Phys., Partl, no. 2B, pp. 831-835, 1995
  3. H. Terabe, H. Arashima, N. Ura, K. Suzuki, K.Ohta, and M. Ishida, 'A silicon pressure sensor with stainless diaphragm for high temperature and chem-ical application', International Conference on Solid-State Sensors and Actuators, Chicago USA, pp. 1481-1484, 1997
  4. G. S. Chung, S. Kawahito, M. Ishida, T. Nakamura,M. Kawashima, and T. Suzuki, 'High-performance pressure sensors using double SOI structure', Rev.Sci. Instrum., vol. 62, pp. 1341-1346, 1991 https://doi.org/10.1063/1.1142496
  5. 이영태, 이용성, 전교석, '고온용 실리콘 압력센서 개발(자동차 엔진의 연소가스 압력 측정용)', 제4회 한국 MEMS 학술대회 초록집, pp. 220-225
  6. Y. Kanda, 'Optimum design consideration for Sili-con pressure sensors using four terminal gauge',Sensors and Actuators, vol. 4, pp. 199-206, 1983 https://doi.org/10.1016/0250-6874(83)85025-2
  7. M. Bao and Y. Wang, 'Analysis and design of a four-terminal silicon pressure sensor at the centre of a diaphragm', Sensors and Actuators, vol. 12, pp.49-56, 1987 https://doi.org/10.1016/0250-6874(87)87005-1
  8. Min-Hang Bao, Wei-Jia Qi, and Yan Wang, 'Geo-metric design rules of four-terminal gauge for Pres-sure sensors', Sensors and Actuators, vol. 18, pp1031-1033, 1989
  9. 특허청, '2000신기술 동향조사 보고서(센서기술)', 전기/전자분야, 제4권, pp. 83-98, 2000
  10. 전자부품연구원 마이크로센서연구실 홈페이지, 'http://www.keti.re.kr/ps-nrl', 2003