전기학회논문지P (The Transactions of the Korean Institute of Electrical Engineers P)
- 제52권2호
- /
- Pages.56-60
- /
- 2003
- /
- 1229-800X(pISSN)
- /
- 2586-7792(eISSN)
스퍼터링 조건변화에 따른 Ni/Cr/Si 박막의 전기적 특성
The electrical properties of Ni/Cr/Si thin film with sputtering process parameters
- Lee, Boong-Joo (ACROSENS Co. ltd.) ;
- Park, Gu-Bum ;
- Kim, Byung-Soo ;
- Lee, Duck-Chool
- 투고 : 2003.02.24
- 심사 : 2003.05.07
- 발행 : 2003.06.01
초록
In this work, we have fabricated thin film resistors using the DC/RF magnetron sputter of 51wt%Ni-41wt%Cr-8wt%Si alloy target and studied the effect of the process parameters on the electrical properties. In fabrication process, sputtering power, substrate temperature and annealing temperature have been varied as controllable parameters. TCR decreases with increasing the substrate temperature, but TCR increases over 300 [