Application of the Plasma Etching technique to Fabricating a Concave-type Pt Electrode Capacitor

  • Kim, Hyoun Woo (School of Materials Science and Engineering, Inha University) ;
  • Hwang, Woon Suk (School of Materials Science and Engineering, Inha University)
  • Published : 2003.10.01

Abstract

We have used a plasma etching method in order to develop a concave-type Pt electrode capacitor to overcome the limitation of conventional stack-type capacitor in a small critical-dimension (CD) pattern. We have deposited Pt layer on the concave-type structure made by patterning of $SiO_2$ and subsequently we separated the adjacent nodes by etch-back process with photoresist (PR) as a protecting layer.

Keywords

Acknowledgement

Supported by : INHA UNIVERSITY

References

  1. K. Tokashiki, K. Saito, K. Takemura, S. Yamamishi, P. Y. Lesaicherre, H. Miyamoto, E. lkawa, Y. Miyasaka, Proceedings of the 16th Dry Process Symposium, Tokyo, 73 (1994)
  2. S. Saito. K. Juramasu, Jpn. J. Appl. Phys. 31, 135 (1992)
  3. H. Mace, H. Achard, L. Peccoud, Microelectronic engineering 29, 48 (1995)
  4. J. Baborowski, P. Murait, N. Ledermann, S. Hiboux, Vacuum 56, 51 (2000)
  5. D.-S. Wuu, N.-H. Kuo, F.-C. Liao, R.-H. Horng, M.-K. Lee, Appl. Surf. Sci. 169-170, 638 (2001)
  6. K. Nishikawa, Y. Kusumi, T. Oomori, M. Hanazaki, K. Namba. Jpn. Appl. Phys. 32, 6102 (1993)
  7. S. Yokoyama, Y. Ito, K. lshihara, K. Hamada, S. Ohnishi, J. Kudo, K. Sakiyama. Jpn. J. Appl. Phys. 34, 767 (1995)
  8. W.-J. Yoo, J.-H. Hahm, H.-W. Kim, C.-O. Jung, Y.-B. Koh, M.-Y. Lee, Jpn. J. Appl. Phys., 35, 2501 (1996)
  9. T. Eimori, Y. Ono, H. Ito, Nikkei Microdevices 2, 99 (1994)
  10. S. Yokoyama, Y. Ito, K. Ishihara, K. Hamada, S. Ohnishi, J. Kudo, K. Sakiyama, Ext. Abstr. Int. Conf. Solid State Devices Mater, Business Center for Academic Societies, Tokyo, 721 (1994)
  11. H.-W. Kim, B-S. Ju, C.-J. Kang, J.-T. Moon, Micro-electronic Engineering 65, 185 (2003)
  12. H.-W. Kim, B.-S. Ju, B.-Y. Nam, W.-J. Yoo, C.-J. Kang, T.-H. Ahn, J.-T. Moon, M.-Y. Lee, J. Vac. Sci. Technol. A 17, 2151 (1999)