Journal of the Korean institute of surface engineering (한국표면공학회지)

The Korean Institute of Surface Engineering (한국표면공학회)
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Effect of Additives and Plating Conditions on Sn-Pb Alloy Film of Semiconductor Formed by High Speed Electroplating

전해도금에 의해 형성된 반도체 금속도금용 주석-납 합금피막의 첨가제 및 전해조건의 영향

  • 정강효 (창원대학교 화공시스템공학과) ;
  • 김병관 (창원대학교 화공시스템공학과) ;
  • 박상언 (한국기계연구원 표면연구부) ;
  • 김만 (한국기계연구원 표면연구부) ;
  • 장도연 (한국기계연구원 표면연구부)
  • Published : 2003.02.01
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Abstract

Effects of additives and plating conditions of high speed electroplating were investigated. The Sn content in electrodeposit was highly decreased with increasing current density from $10A/dm^2$ to $50A/dm^2$, and the current efficiency on the cathode was decreased. The carbon content in the electrodeposit was decreased with increasing current density from $10A/dm^2$ to $30A/dm^2$, however the carbon content was highly increased in the range of $40A/dm^2$$∼50A/dm^2$. The formation of tetravalent tin and stannic oxide sludge was prevented by the addition of gallic acid in the bath. The changing of Sn content in the electrodeposit is caused by the addition of gallic acid.

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References

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