References
- S. J. Tans, M. H. Devoret, H. Dai, A. Thess, R. E. Smalley, L. J. Geerligs and C. Dekker, Nature, 286, 474 (1997) https://doi.org/10.1038/386474a0
- L. Marty, V. Bouchiat, A. M. Bonnot, M. Chaumont, T. Fournier, S. Decossas and S. Roche. Microelectronic Engineering, 61-62, 485 (2002) https://doi.org/10.1016/S0167-9317(02)00487-2
- J.-M. Bobard, H. Kind, T. Stockli and L.-O. Nilsson, Solid-State Electronics, 45, 893 (2001) https://doi.org/10.1016/S0038-1101(00)00213-6
- W. Z. Li, S. S. Xie, N. X. Qian, B. H. Chang, B. S. Zou, W. Y. Zhou, R. A. Zhao, and G.Wang, Science, 274, 1701 (1996) https://doi.org/10.1126/science.274.5293.1701
- S. Fan, M. G. Chapline, N. R. Franklin, T. W. Tombler, A. M. Casell and H. Dai, Science, 283, 512 (1999) https://doi.org/10.1126/science.283.5401.512
- A. G. Rinzler, J. Liu, H. Dai, P. Nikolaev, C. B. Huffman, F. J. Rinzler-Macias, P. J. Boul, A. H. Lu, D. Heymann, D. T. Colbert, R. S. Lee, J. E. Fisher, A. M. Rao, P. C. Eklund, and R. E. Smalley, Appl. Phys. A, 67, 29 (1998) https://doi.org/10.1007/s003390050734
- R. Ma, C. L. Xu, B. Q. Wei, J. Liang, D. H. Wu and D. Li, J. Mater. Res. Bull., 34, 741 (1999) https://doi.org/10.1016/S0025-5408(99)00064-1
- Z. F. Ren, Z. P. Huang, J. W. Xu, J. H. Wang, P. Bush, M. P. Sirgal and P. N. Provencio, Science, 282, 1105 (1998) https://doi.org/10.1126/science.282.5391.1105
- C. Bower, W. Zhu, J. Sungho and O. Zhou, Appl. Phy. Lett., 77, 830 (2000) https://doi.org/10.1063/1.1306658
- Y. Avigal, R. Kalish, Appl. Phy. Lett., 78, 2291 (2001) https://doi.org/10.1063/1.1365409
- Y. H. Mo, A. K. M. F. Kibria and K. S. Nahm, Synthetic Metals, 122, 443 (2001) https://doi.org/10.1016/S0379-6779(00)00565-8
- S. Amelinckx, X. B. Zhang, D. Bernaerts, X. F. Zhang, V. Ivanoa and J. B. Nagy, Science, 267, 635 (1995) https://doi.org/10.1126/science.267.5202.1334
- X. Wang, Y. Liu, and D. Zhu, Chem. Phy. Lett., 340, 419 (2001) https://doi.org/10.1016/S0009-2614(01)00410-9