Formation of Neutral Beam by Low Angle Reflection

  • Lee, Do-Haing (Department of Materials Engineering, Sungkyunkwan University) ;
  • Jung, Min-Jae (Department of Materials Engineering, Sungkyunkwan University) ;
  • Bae, Jung-Woon (Department of Materials Engineering, Sungkyunkwan University) ;
  • Kim, Sung-Jin (Department of Electrical Engineering, Pohang University of Science and Technology) ;
  • Lee, Jae-Koo (Department of Electrical Engineering, Pohang University of Science and Technology) ;
  • Yeom, Geun-Young (Department of Materials Engineering, Sungkyunkwan University)
  • 발행 : 2003.06.01

초록

In this study, a neutral beam was formed using a low angle forward reflection of the ion beam and its degree of neutralization at different reflection angles was investigated. When the ion beam was reflected by a reflector at the angles lower than 15$^{\circ}$, most of the ions reflected were neutralized and the lower reflector angle showed the higher degree of neutralization. Photoresist(PR) and SiO$_2$ etchings were carried out with the neutralized oxygen and fluorine radical fluxes, respectively, and highly anisotropic etch profiles could be obtained suggesting the formation of highly directional neutral flux.

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