Journal of the Korean institute of surface engineering (한국표면공학회지)

The Korean Institute of Surface Engineering (한국표면공학회)
권호 표지

Pulsed Magnet ron Sputtering Deposit ion of DLC Films Part II : High-voltage Bias-assisted Deposition

  • Chun, Hui-Gon (School of Materials Science and Engineering, Remm, University of Ulsan) ;
  • Lee, Jing-Hyuk (School of Materials Science and Engineering, Remm, University of Ulsan) ;
  • You, Yong-Zoo (School of Materials Science and Engineering, Remm, University of Ulsan) ;
  • Ko, Yong-Duek (School of Materials Science and Engineering, Remm, University of Ulsan) ;
  • Cho, Tong-Yul (School of Materials Science and Engineering, Remm, University of Ulsan) ;
  • Nikolay S. Sochugov
  • Published : 2003.04.01
Download PDF
⟨ Previous Next ⟩

Abstract

Short ($\tau$=40 $mutextrm{s}$) and high-voltage ($U_{sub}$=2~8 kV) negative substrate bias pulses were used to assist pulsed magnetron sputtering DLC films deposition. Space- and time-resolved probe measurements of the plasma characteristics have been performed. It was shown that in case of high-voltage substrate bias spatial non-uniformity of the magnetron discharge plasma density greatly affected DLC deposition process. By Raman spectroscopy it was found that maximum percentage of s $p^3$-bonded carbon atoms (40 ~ 50%) in the coating was attained at energy $E_{c}$ ~700 eV per deposited carbon atom. Despite rather low diamond-like phase content these coatings are characterized by good adhesion due to ion mixing promoted by high acceleration voltage. Short duration of the bias pulses is also important to prevent electric breakdowns of insulating DLC film during its growth.wth.

Keywords

References

  1. F. Seitz, J.S. Koehler, Progress in SolidState Physics, Academic, New York, Vol. 2(1957) 30
  2. S. Aisenberg, J. Vac. Sci.' Technol, A 8(1990) 2150
  3. K.V. Oskomov. Hui-Gon Chun. N.S. Sochugov, A.N. Zakharov, Pulsed magnetron sputtering deposition of DLC films. Part I: low voltage bias-assisted deposition, J. of Korea Inst. of Surf. Eng., (2003) (in press)
  4. R. Vuppuladhadium, H.E. Jackson, R.L.C.Wu, J. Appl. Phys., 77 (1995) 2714 https://doi.org/10.1063/1.358740
  5. M. Kitabatake, K. Wasa, J. Vac. Sci. Technol., A 6 (1988) 1793
  6. Y. Funada, K. Awazu, H. Yasui, T. Sugita, Surf. Coat. Technol., 128/129 (2000) 308 https://doi.org/10.1016/S0257-8972(00)00591-0
  7. Y. Lifshitz, G.D. Lempert, E. Grossman, Phys. Rev. Lett., 72 (1994) 2753 https://doi.org/10.1103/PhysRevLett.72.2753
  8. E. Grossman, G.D. Lempert, Y. Lifshitz, et.al., Appl. Phys. Lett, 68 (1996) 1214 https://doi.org/10.1063/1.115973
  9. R.G. Lacerda, F.C. Marques, Appl. Phys.Lett., 73 (1998) 617 https://doi.org/10.1063/1.121874
  10. F.C. Marques, R.G. Lacerda, J. Vilcarromero,et. al., Thin Solid Films, 343/344 (1999)222 https://doi.org/10.1016/S0040-6090(98)01630-7
  11. F. Qian, R.K. Singh, S.K. Dutta, P.P. Pronko,Appl. Phys. Lett, 67 (1995) 3120 https://doi.org/10.1063/1.114853