한국표면공학회지 (Journal of the Korean institute of surface engineering)

  • 제36권2호
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  • Pages.141-147
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  • 2003
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  • 1225-8024(pISSN)
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  • 2288-8403(eISSN)
한국표면공학회 (The Korean Institute of Surface Engineering)
권호 표지

단일전구체(1,3-DSB)에 의한 저온 SiC박막 성장에 관한 연구

A Study on the Low Temperature Growth of SiC Film with a 1,3-DSB Precursor

  • 발행 : 2003.04.01
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초록

Silicon carbide thin film was deposited in APCVD and LPCVD system with 1,3-DSB precursor 1,3-DSB is the single precursor to deposit SiC on Si at low temperature. SiC film was deposited at $850^{\circ}C$ lower than ordinary temperature ($1000~1200^{\circ}C$) in CVD process. SiC thin film glowed to high oriented (111) plane in APCVD system. In LPCVD system, SiC film groved to preferred (220) plane at same temperature. This discrepancy between preferred planes can be described by the difference of deposition mechanism. Amorphous phase and crystal defect were observed in APCVD system with the main growth mechanism of mass transport limited region. But in LPCVD system, we got the SIC film of uniform, faceted structure and high quality.

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